Datasheet > EMH2407R-TL

EMH2407R-TL

更新时间： 2024-11-14 20:46:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	315K
描述
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,6A I(D),TSSOP

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中文翻译

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技术参数
数据手册

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EMH2407R-TL 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.76	最大漏极电流 (Abs) (ID)：	6 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	1.4 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

EMH2407R-TL 数据手册

EMH2407R

Ordering number : ENA1484

SANYO Sem iconductors

DATA S HEET

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

EMH2407R

Features

•

ON-resistance R (on)1 : 16m (typ.)

Best suited for LiB charging and discharging switch

2.5V drive

Common-drain type

Halogen free compliance

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

±12

DSS

GSS

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

PW 10 s, duty cycle 1%

When mounted on ceramic substrate (900mm²0.8mm) 1unit

When mounted on ceramic substrate (900mm²0.8mm)

≤

1.3

1.4

150

°C

Channel Temperature

Storage Temperature

Tch

Tstg

--55 to +150

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: EMH8

7045-006

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

0.2

0.125

Taping Type : TL

Marking

Lot No.

0.5

2.0

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain

Electrical Connection

6 : Drain

7 : Drain

8 : Drain

SANYO : EMH8

http://semicon.sanyo.com/en/network

No. A1484-1/4

42810PE TK IM TC-00002344

12 3 4

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