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EMH2301

更新时间： 2024-01-16 03:43:01
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4页 39K
描述
P-Channel Silicon MOSFET General-Purpose Switching Device

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中文翻译

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EMH2301 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.38
Is Samacsys：N配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：2 A
最大漏极电流 (ID)：2 A最大漏源导通电阻：0.15 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F8
元件数量：2端子数量：8
工作模式：DEPLETION MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：1.2 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

EMH2301 数据手册

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Ordering number : EN8725A  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
EMH2301  
Features  
• The EMH2301 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,  
thereby enabling high-density mounting.  
• 1.8V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
P-channel  
Unit  
V
V
--20  
±12  
-- 2  
DSS  
GSS  
V
V
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Total Dissipation  
I
PW≤10µs, duty cycle≤1%  
--8  
A
DP  
P
D
Mounted on a ceramic board (900mm2✕0.8mm) 1unit  
Mounted on a ceramic board (900mm2✕0.8mm)  
1.0  
1.2  
150  
W
W
°C  
°C  
P
T
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=--1mA, V =0V  
--20  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=--20V, V =0V  
GS  
--1  
±10  
--1.4  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
V
(off)  
GS  
=--10V, I =--1mA  
--0.4  
1.9  
D
Forward Transfer Admittance  
yfs  
=--10V, I =--1A  
3.2  
115  
165  
260  
420  
73  
S
D
R
(on)1  
I
D
I
D
I
D
=--1A, V =--4V  
GS  
150  
235  
520  
mΩ  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
DS  
DS  
DS  
Static Drain-to-Source On-State Resistance  
R
R
(on)2  
(on)3  
=--0.5A, V =--2.5V  
GS  
=--0.3A, V =--1.8V  
GS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
V
V
V
=--10V, f=1MHz  
=--10V, f=1MHz  
=--10V, f=1MHz  
DS  
DS  
DS  
Coss  
Crss  
60  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
11.8  
33  
t
r
ns  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
48  
ns  
t
f
43  
ns  
Marking : MA  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
92706 MS IM TC-00000204 / 71006PE MS IM TC-00000038  
No.8725-1/4  
1234

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