Datasheet > EMH2

EMH2

更新时间： 2024-11-15 17:01:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	333K
描述
50V,30mA,NPN Bipolar Digital Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EMH2 数据手册

Dual Digital Transistors

EMH2

Features



Two DTC144E chip in SOT-563 package

Transistor elements are independent, eliminating interference

Mounting cost and area can be cut in half

Mechanical Data



Case: SOT-563

Molding Compound: UL Flammability Classification Rating 94V-0

SOT-563

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

EMH2

SOT-563

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Value

Symbol

Parameter

Unit

Tr2

Tr1

V_CC

V_IN

Supply Voltage

Input Voltage

Output Current

-10 to +40

I_O

I_C(MAX.)

Collector Current ^*1

100

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation ^{*2, 3}

P_D

T_J

150

°C

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

DTM0100A: August 2022

www.gmesemi.com

12 3 4

中文翻译

下载PDF

与EMH2相关器件

型号	品牌	获取价格	描述	数据表
EMH2_12	ROHM	获取价格	NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
EMH2301	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device
EMH2302	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device
EMH2308	SANYO	获取价格	General-Purpose Switching Device Applications
EMH2308_12	SANYO	获取价格	General-Purpose Switching Device Applications
EMH2308-TL-E	ONSEMI	获取价格	P-Channel Power MOSFET, -20 V, -3 A, 85 mΩ, Dual EMH8, SOT-383FL / EMH8, 3000-RE
EMH2308-TL-H	ONSEMI	获取价格	P 沟道，功率 MOSFET，-20 V，-3 A，85mΩ，双 EMH8
EMH2314	SANYO	获取价格	General-Purpose Switching Device Applications
EMH2314-TL-H	ONSEMI	获取价格	Power MOSFET, -12V, 37mΩ, -5A, Dual P-Channel
EMH2401	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device