EMF5XV6T5

更新时间： 2024-09-15 03:04:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	70K
描述
Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

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EMF5XV6T5 数据手册

EMF5XV6T5

Preferred Devices

Power Management,

Dual Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

http://onsemi.com

Features

• Simplifies Circuit Design

• Reduces Board Space

(3)

(2)

(1)

• Reduces Component Count

• These are Pb−Free Devices

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

(4)

(5)

(6)

Q (T = 25°C unless otherwise noted, common for Q and Q )

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Vdc

CBO

CEO

100

mAdc

Electrostatic Discharge

ESD

HBM Class 1

MM Class B

Q (T = 25°C)

SOT−563

CASE 463A

PLASTIC

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

−12

Vdc

Adc

CEO

CBO

EBO

−15

−6.0

Collector Current − Peak

−1.0 (Note 1)

−0.5

MARKING DIAGRAM

Collector Current − Continuous

Electrostatic Discharge

ESD

HBM Class 3B

MM Class C

UY M G

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

UY = Specific Device Code

T = 25°C

357 (Note 2)

2.9 (Note 2)

mW/°C

= Date Code

Derate above 25°C

= Pb−Free Package

(Note: Microdot may be in either location)

Thermal Resistance,

Junction-to-Ambient

350 (Note 2)

°C/W

Characteristic

(Both Junctions Heated)

ORDERING INFORMATION

Symbol

Max

Unit

†

Device

Package

Shipping

Total Device Dissipation

T = 25°C

Derate above 25°C

500 (Note 2)

4.0 (Note 2)

EMF5XV6T5

SOT−563

(Pb−Free)

8000/Tape & Reel

mW/°C

Thermal Resistance,

Junction-to-Ambient

250 (Note 2)

°C/W

EMF5XV6T5G

SOT−563

(Pb−Free)

8000/Tape & Reel

Junction and Storage

Temperature Range

T , T

J stg

−55 to +150

°C

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Single pulse 1.0 ms.

Preferred devices are recommended choices for future use

2. FR−4 @ Minimum Pad.

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

November, 2005 − Rev. 2

EMF5XV6T5/D

12 3 4 5 6

中文翻译

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EMF5XV6T5 替代型号

型号	品牌	替代类型	描述	数据表
EMF5T2R	ROHM	功能相似	Power management (dual transistors)

与EMF5XV6T5相关器件

型号	品牌	获取价格	描述	数据表
EMF5XV6T5G	ONSEMI	获取价格	Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic B
EMF6	ROHM	获取价格	Power management (dual transistors)
EMF60P02J	EXCELLIANCE	获取价格	SOT23-3
EMF60P02JS	EXCELLIANCE	获取价格	SOT23-3
EMF65N15A	EXCELLIANCE	获取价格	TO252-2
EMF65N15E	EXCELLIANCE	获取价格	TO220-3
EMF7	ROHM	获取价格	Power management (dual transistors)
EMF8	ROHM	获取价格	Power management (dual transistors)
EMF8_1	ROHM	获取价格	Power management (dual transistors)
EMF9	ROHM	获取价格	Power management (dual transistors)

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