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EMF5XV6T5G PDF预览

EMF5XV6T5G

更新时间： 2024-11-09 03:04:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管光电二极管
页数 文件大小 规格书
6页 70K
描述
Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

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中文翻译

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EMF5XV6T5G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：5.37
其他特性：BUILT IN BIAS RESISTOR RATIO 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-F6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN AND PNP
最大功率耗散 (Abs)：0.5 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管元件材料：SILICONBase Number Matches：1

EMF5XV6T5G 数据手册

 浏览型号EMF5XV6T5G的Datasheet PDF文件第2页浏览型号EMF5XV6T5G的Datasheet PDF文件第3页浏览型号EMF5XV6T5G的Datasheet PDF文件第4页浏览型号EMF5XV6T5G的Datasheet PDF文件第5页浏览型号EMF5XV6T5G的Datasheet PDF文件第6页 
EMF5XV6T5  
Preferred Devices  
Power Management,  
Dual Transistors  
NPN Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
Features  
• Simplifies Circuit Design  
• Reduces Board Space  
(3)  
(2)  
(1)  
• Reduces Component Count  
• These are Pb−Free Devices  
Q
1
Q
2
MAXIMUM RATINGS  
R
2
R
1
Rating  
Symbol  
Value  
Unit  
(4)  
(5)  
(6)  
Q (T = 25°C unless otherwise noted, common for Q and Q )  
1
A
1
2
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
V
50  
50  
Vdc  
Vdc  
CBO  
CEO  
6
I
100  
mAdc  
C
Electrostatic Discharge  
ESD  
HBM Class 1  
MM Class B  
1
Q (T = 25°C)  
2
A
SOT−563  
CASE 463A  
PLASTIC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
−12  
Vdc  
Vdc  
Vdc  
Adc  
CEO  
CBO  
EBO  
V
V
−15  
−6.0  
Collector Current − Peak  
I
−1.0 (Note 1)  
−0.5  
MARKING DIAGRAM  
C
Collector Current − Continuous  
Electrostatic Discharge  
ESD  
HBM Class 3B  
MM Class C  
UY M G  
THERMAL CHARACTERISTICS  
G
Characteristic  
1
(One Junction Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
D
UY = Specific Device Code  
T = 25°C  
357 (Note 2)  
2.9 (Note 2)  
mW  
mW/°C  
A
M
= Date Code  
Derate above 25°C  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Thermal Resistance,  
Junction-to-Ambient  
R
q
JA  
350 (Note 2)  
°C/W  
Characteristic  
(Both Junctions Heated)  
ORDERING INFORMATION  
Symbol  
Max  
Unit  
†
Device  
Package  
Shipping  
Total Device Dissipation  
P
D
T = 25°C  
Derate above 25°C  
500 (Note 2)  
4.0 (Note 2)  
mW  
A
EMF5XV6T5  
SOT−563  
(Pb−Free)  
8000/Tape & Reel  
mW/°C  
Thermal Resistance,  
Junction-to-Ambient  
R
250 (Note 2)  
°C/W  
q
JA  
EMF5XV6T5G  
SOT−563  
(Pb−Free)  
8000/Tape & Reel  
Junction and Storage  
Temperature Range  
T , T  
J stg  
−55 to +150  
°C  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Single pulse 1.0 ms.  
Preferred devices are recommended choices for future use  
2. FR−4 @ Minimum Pad.  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 2  
EMF5XV6T5/D  
 
123456

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