Datasheet > EMB1

EMB1

更新时间： 2024-03-03 10:10:16

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
5页	362K
描述
SOT-563

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EMB1 数据手册

RoHS

COMPLIANT

EMB1

(T =25℃ Unless otherwise specified)

■

Electrical Characteristics

Item

Symbol

V_I(off)

V_I(on)

V_{O (on)}

I_I

Unit

Conditions

V_CC=-5V,Ic=-100uA

V_O=-0.2V,Ic=-5mA

I_O/Ii =-10mA/-0.5 mA

V_I=-5V

Min

Typ

Max

-0.5

Input voltage

-3

Output voltage

Input current

-0.3

-0.36

-0.5

Output current

DC current gain

Input resistance

Resistance ratio

Transition frequency

I_O(off)

G_I

V_CC=-50V, Vi=0

V_O=-5V, Io =-5mA

15.4

0.8

R₁

kΩ

28.6

1.2

R₂/R₁

f_T

MHz

V_CE=-10V,I_E=-5mA,f=100MHz

250

■ Thermal Characteristics

Parameter

Thermal resistance, junction-to-ambient

Thermal resistance, junction-to-case

Symbol

Unit

℃/W

Value

(1)

833

667

θJ-A

(1)

θJ-C

Note:

（1）Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 25.4mm*25.4mm

copper pad areas

2 / 5

S-S4063

Rev.1.2,20-Mar-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

123 4 5

下载PDF

与EMB1相关器件

型号	品牌	描述	获取价格	数据表
EMB10	ROHM	General purpose (dual digital transistors)	获取价格
EMB10FHAT2R	ROHM	Small Signal Bipolar Transistor,	获取价格
EMB10T2R	ROHM	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, EMT6, 6	获取价格
EMB11	HTSEMI	dual digital transistors (PNP PNP)	获取价格
EMB11	ROHM	General purpose (dual digital transistors)	获取价格
EMB11	CJ	SOT-563	获取价格