Datasheet > EIC1314-7

EIC1314-7

更新时间： 2024-09-21 06:56:19

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
4页	247K
描述
13.75-14.50 GHz 7-Watt Internally Matched Power FET

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EIC1314-7 数据手册

EIC1314-7

ISSUED 11/13/2008

13.75-14.50 GHz 7-Watt Internally Matched Power FET

FEATURES

.060 MIN.

Excelics

•

13.75– 14.50GHz Bandwidth

EIC1314-7

.650±.008 .512

.319

Input/Output Impedance Matched to 50 Ohms

+38.5 dBm Output Power at 1dB Compression

6.0 dB Power Gain at 1dB Compression

25% Power Added Efficiency

Hermetic Metal Flange Package

100% Tested for DC, RF, and R_TH

GATE

DRAIN

.022

YYWW

.045

.094

.382

.004

.070 ±.008

.129

ALL DIMENSIONS IN INCHES

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

Caution! ESD sensitive device.

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

_DS= 10 V, I_DSQ≈ 2400mA

f = 13.75-14.50GHz

38.5

dBm

Gain at 1dB Compression

V_DS= 10 V, I_DSQ≈ 2400mA

Gain Flatness

f = 13.75-14.50GHz

G_1dB

±0.6

∆G

V_DS= 10 V, I_DSQ≈2400mA

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L²

-41

-45

dBc

IMD3

V_DS= 10 V, I_DSQ≈ 65% IDSS

f = 14.50 GHz

Power Added Efficiency at 1dB Compression

PAE

V_DS= 10 V, I_DSQ≈ 2400mA

f = 13.75-14.50GHz

Drain Current at 1dB Compression

f = 13.75-14.50GHz

2400

3000

6.5

-4.0

Id_1dB

I_DSS

V_P

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

V_DS= 3 V, I_DS= 38 mA

Pinch-off Voltage

-2.5

2.6

^oC/W

Thermal Resistance³

R_TH

Note: 1) Tested with 50 Ohm gate resistor.

2) S.C.L. = Single Carrier Level.

3) Overall Rth depends on case mounting.

MAXIMUM RATING AT 25°C^1,2

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

Drain-Source Voltage

10V

-4V

Vds

Gate-Source Voltage

Input Power

-5

Vgs

35dBm

175 ^oC

-65 to +175 ^oC

50W

@ 3dB Compression

175 ^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

Tch

-65 to +175 ^oC

Tstg

50W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 4

issued November 2008

12 3 4

中文翻译

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与EIC1314-7相关器件

型号	品牌	获取价格	描述	数据表
EIC1314-8	EXCELICS	获取价格	13.75-14.5 GHz 8-Watt Internally Matched Power FET
EIC1414-12	EXCELICS	获取价格	14.0-14.5 GHz 12-Watt Internally Matched Power FET
EIC1414-2	EXCELICS	获取价格	14.00-14.50GHz 2-Watt Internally-Matched Power FET
EIC1414-4	EXCELICS	获取价格	14.00-14.50GHz 4-Watt Internally-Matched Power FET
EIC1414-4NH	EXCELICS	获取价格	14.00-14.50GHz 4-Watt Internally-Matched Power FET
EIC1414-8	EXCELICS	获取价格	14.0-14.5 GHz 8-Watt Internally Matched Power FET
EIC1415-12	EXCELICS	获取价格	14.40-15.40GHz 12-Watt Internally Matched Power FET
EIC1415-2	EXCELICS	获取价格	14.40-15.35GHz 2-Watt Internally-Matched Power FET
EIC1415-2NH	EXCELICS	获取价格	14.40-15.35GHz 2-Watt Internally-Matched Power FET
EIC1415-3	EXCELICS	获取价格	14.40-15.35GHz 3-Watt Internally Matched Power FET

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