Datasheet > 存储 > DRAM> EDJ2108EEBG

EDJ2108EEBG

更新时间： 2024-11-28 12:51:35

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器双倍数据速率
页数	文件大小	规格书
32页	606K
描述
2G bits DDR3L SDRAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EDJ2108EEBG 数据手册

COVER

DATA SHEET

2G bits DDR3L SDRAM

EDJ2108EEBG (256M words × 8 bits)

EDJ2116EEBG (128M words × 16 bits)

Specifications

Features

• Density: 2G bits

• Organization

• Double-data-rate architecture: two data transfers per

clock cycle

• The high-speed data transfer is realized by the 8 bits

prefetch pipelined architecture

• Bi-directional differential data strobe (DQS and /DQS)

is transmitted/received with data for capturing data at

the receiver

• DQS is edge-aligned with data for READs; center-

aligned with data for WRITEs

• Differential clock inputs (CK and /CK)

— 32M words × 8 bits × 8 banks (EDJ2108EEBG)

— 16M words × 16 bits × 8 banks (EDJ2116EEBG)

• Package

— 78-ball FBGA (EDJ2108EEBG)

— 96-ball FBGA (EDJ2116EEBG)

— Lead-free (RoHS compliant) and Halogen-free

• Power supply: 1.35V (typ)

— VDD = 1.283V to 1.45V

• DLL aligns DQ and DQS transitions with CK transitions

— Backward compatible for VDD, VDDQ

= 1.5V 0.075V

• Commands entered on each positive CK edge; data

and data mask referenced to both edges of DQS

• Data rate

• Data mask (DM) for write data

— 1866Mbps/1600Mbps/1333Mbps (max)

• 1KB page size (EDJ2108EEBG)

— Row address: A0 to A14

• Posted /CAS by programmable additive latency for

better command and data bus efficiency

• On-Die Termination (ODT) for better signal quality

— Synchronous ODT

— Column address: A0 to A9

• 2KB page size (EDJ2116EEBG)

— Row address: A0 to A13

— Dynamic ODT

— Asynchronous ODT

— Column address: A0 to A9

• Multi Purpose Register (MPR) for pre-defined pattern

read out

• ZQ calibration for DQ drive and ODT

• /RESET pin for Power-up sequence and reset function

• SRT range:

• Eight internal banks for concurrent operation

• Burst length (BL): 8 and 4 with Burst Chop (BC)

• Burst type (BT):

— Sequential (8, 4 with BC)

— Normal/extended

— Interleave (8, 4 with BC)

• Programmable Output driver impedance control

• Seamless BL4 access with bank-grouping

— Applied only for DDR3-1333 and 1600

• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11, 13

• /CAS Write Latency (CWL): 5, 6, 7, 8, 9

• Precharge: auto precharge option for each burst

access

• Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)

• Refresh: auto-refresh, self-refresh

• Refresh cycles

— Average refresh period

7.8µs at 0°C ≤ TC ≤ +85°C

3.9µs at +85°C < TC ≤ +95°C

• Operating case temperature range

— TC = 0°C to +95°C

Document. No. E1750E31 (Ver. 3.1)

Date Published September 2012 (K) Japan

Printed in Japan

URL: http://www.elpida.com

12 3 4 5 6 7...32

中文翻译

下载PDF

与EDJ2108EEBG相关器件

型号	品牌	获取价格	描述	数据表
EDJ2108EEBG-DJ-F	ELPIDA	获取价格	Differential clock inputs
EDJ2108EEBG-GN-F	ELPIDA	获取价格	Differential clock inputs
EDJ2108EEBG-JS-F	ELPIDA	获取价格	2G bits DDR3L SDRAM
EDJ2116DEBG	ELPIDA	获取价格	2G bits DDR3 SDRAM
EDJ2116DEBG-DJ-F	ELPIDA	获取价格	2G bits DDR3 SDRAM
EDJ2116DEBG-GN-F	ELPIDA	获取价格	2G bits DDR3 SDRAM
EDJ2116DEBG-JQ-F	ELPIDA	获取价格	DDR DRAM, 128MX16, 0.195ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
EDJ2116DEBG-JS-F	ELPIDA	获取价格	2G bits DDR3 SDRAM
EDJ2116DEBG-MQ-F	ELPIDA	获取价格	DDR DRAM, 128MX16, 0.18ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
EDJ2116DEBG-MU-F	ELPIDA	获取价格	2G bits DDR3 SDRAM

与EDJ2108EEBG相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

47
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

37
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

65
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

EDJ2108EEBG

EDJ2108EEBG 数据手册

与EDJ2108EEBG相关器件

与EDJ2108EEBG相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

EDJ2108EEBG

EDJ2108EEBG 数据手册

与EDJ2108EEBG相关器件

与EDJ2108EEBG相关文章

您还可以找

您在本页遇到什么问题？