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EDJ4204BFBG-DJ-F PDF预览

EDJ4204BFBG-DJ-F

更新时间: 2024-11-28 12:24:55
品牌 Logo 应用领域
尔必达 - ELPIDA 时钟
页数 文件大小 规格书
32页 526K
描述
Differential clock inputs

EDJ4204BFBG-DJ-F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TFBGA, BGA78,9X13,32Reach Compliance Code:unknown
风险等级:5.84访问模式:MULTI BANK PAGE BURST
最长访问时间:20 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):667 MHzI/O 类型:COMMON
交错的突发长度:4,8JESD-30 代码:R-PBGA-B78
长度:10.6 mm内存密度:4294967296 bit
内存集成电路类型:DDR DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:78字数:1073741824 words
字数代码:1000000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:1GX4输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA78,9X13,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH电源:1.5 V
认证状态:Not Qualified刷新周期:8192
座面最大高度:1.2 mm自我刷新:YES
连续突发长度:4,8最大待机电流:0.012 A
子类别:DRAMs最大压摆率:0.16 mA
最大供电电压 (Vsup):1.575 V最小供电电压 (Vsup):1.425 V
标称供电电压 (Vsup):1.5 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:9 mm
Base Number Matches:1

EDJ4204BFBG-DJ-F 数据手册

 浏览型号EDJ4204BFBG-DJ-F的Datasheet PDF文件第2页浏览型号EDJ4204BFBG-DJ-F的Datasheet PDF文件第3页浏览型号EDJ4204BFBG-DJ-F的Datasheet PDF文件第4页浏览型号EDJ4204BFBG-DJ-F的Datasheet PDF文件第5页浏览型号EDJ4204BFBG-DJ-F的Datasheet PDF文件第6页浏览型号EDJ4204BFBG-DJ-F的Datasheet PDF文件第7页 
COVER  
PRELIMINARY DATA SHEET  
4G bits DDR3 SDRAM  
EDJ4204BFBG (1024M words × 4 bits)  
EDJ4208BFBG (512M words × 8 bits)  
EDJ4216BFBG (256M words × 16 bits)  
Specifications  
Features  
• Density: 4G bits  
• Organization  
• Double-data-rate architecture: two data transfers per  
clock cycle  
• The high-speed data transfer is realized by the 8 bits  
prefetch pipelined architecture  
• Bi-directional differential data strobe (DQS and /DQS)  
is transmitted/received with data for capturing data at  
the receiver  
— 128M words × 4 bits × 8 banks (EDJ4204BFBG)  
— 64M words × 8 bits × 8 banks (EDJ4208BFBG)  
— 32M words × 16 bits × 8 banks (EDJ4216BFBG)  
• Package  
— 78-ball FBGA (EDJ4204BFBG, EDJ4208BFBG)  
— 96-ball FBGA (EDJ4216BFBG)  
— Lead-free (RoHS compliant) and Halogen-free  
• Power supply: VDD = 1.5V 0.075V  
• Data rate  
• DQS is edge-aligned with data for READs; center-  
aligned with data for WRITEs  
• Differential clock inputs (CK and /CK)  
• DLL aligns DQ and DQS transitions with CK transitions  
• Commands entered on each positive CK edge; data  
and data mask referenced to both edges of DQS  
— 1866Mbps/1600Mbps/1333Mbps (max)  
• 1KB page size  
• Data mask (DM) for write data  
— Row address: A0 to A15  
— Column address: A0 to A9, A11 (EDJ4204BFBG)  
A0 to A9 (EDJ4208BFBG)  
• Posted /CAS by programmable additive latency for  
better command and data bus efficiency  
• On-Die Termination (ODT) for better signal quality  
— Synchronous ODT  
— Dynamic ODT  
— Asynchronous ODT  
• Multi Purpose Register (MPR) for pre-defined pattern  
read out  
• ZQ calibration for DQ drive and ODT  
• Programmable Partial Array Self-Refresh (PASR)  
• /RESET pin for Power-up sequence and reset function  
• SRT range:  
• 2KB page size (EDJ4216BFBG)  
— Row address: A0 to A14  
— Column address: A0 to A9  
• Eight internal banks for concurrent operation  
• Interface: SSTL_15  
• Burst length (BL): 8 and 4 with Burst Chop (BC)  
• Burst type (BT):  
— Sequential (8, 4 with BC)  
— Interleave (8, 4 with BC)  
• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11, 13  
• /CAS Write Latency (CWL): 5, 6, 7, 8, 9  
— Normal/extended  
• Programmable Output driver impedance control  
• Precharge: auto precharge option for each burst  
access  
• Driver strength: RZQ/7, RZQ/6 (RZQ = 240)  
• Refresh: auto-refresh, self-refresh  
• Refresh cycles  
— Average refresh period  
7.8µs at 0°C TC +85°C  
3.9µs at +85°C < TC +95°C  
• Operating case temperature range  
— TC = 0°C to +95°C  
Document. No. E1923E20 (Ver. 2.0)  
Date Published January 2013 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
©Elpida Memory, Inc. 2012-2013  

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