Datasheet > EDJ4216BASE-GN-F

EDJ4216BASE-GN-F

更新时间： 2024-11-28 11:45:07

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器双倍数据速率
页数	文件大小	规格书
146页	1413K
描述
4G bits DDR3 SDRAM

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中文翻译

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数据手册

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EDJ4216BASE-GN-F 数据手册

DATA SHEET

4G bits DDR3 SDRAM

EDJ4216BASE (256M words × 16 bits)

Specifications

Features

• Density: 4G bits

• Organization: 32M words × 16 bits × 8 banks

• Package: 96-ball FBGA

⎯ Lead-free (RoHS compliant) and Halogen-free

• Power supply: VDD, VDDQ = 1.5V 0.075V

• Data rate

• Double-data-rate architecture; two data transfers per

clock cycle

• The high-speed data transfer is realized by the 8 bits

prefetch pipelined architecture

• Bi-directional differential data strobe (DQS and /DQS)

is transmitted/received with data for capturing data at

the receiver

⎯ 1600Mbps/1333Mbps/1066Mbps (max.)

• 2KB page size

• DQS is edge-aligned with data for READs; center-

aligned with data for WRITEs

• Differential clock inputs (CK and /CK)

⎯ Row address: A0 to A14

• DLL aligns DQ and DQS transitions with CK

⎯ Column address: A0 to A9

• Eight internal banks for concurrent operation

• Interface: SSTL_15

• Burst lengths (BL): 8 and 4 with Burst Chop (BC)

• Burst type (BT):

⎯ Sequential (8, 4 with BC)

⎯ Interleave (8, 4 with BC)

• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11

• /CAS Write Latency (CWL): 5, 6, 7, 8

transitions

• Commands entered on each positive CK edge; data

and data mask referenced to both edges of DQS

• Data mask (DM) for write data

• Posted /CAS by programmable additive latency for

better command and data bus efficiency

• On-Die Termination (ODT) for better signal quality

⎯ Synchronous ODT

⎯ Dynamic ODT

⎯ Asynchronous ODT

• Multi Purpose Register (MPR) for temperature read

out

• Precharge: auto precharge option for each burst

access

• Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)

• Refresh: auto-refresh, self-refresh

• Refresh cycles

⎯ Average refresh period

7.8μs at 0°C ≤ TC ≤ +85°C

3.9μs at +85°C < TC ≤ +95°C

• ZQ calibration for DQ drive and ODT

• Programmable Partial Array Self-Refresh (PASR)

• /RESET pin for Power-up sequence and reset

function

• SRT range:

⎯ Normal/extended

• Programmable Output driver impedance control

• Operating case temperature range

⎯ TC = 0°C to +95°C

Document No. E1646E41 (Ver. 4.1)

Date Published November 2011 (K) Japan

Printed in Japan

URL: http://www.elpida.com

Elpida Memory, Inc. 2010-2011

12 3 4 5 6 7...146

中文翻译

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与EDJ4216BASE-GN-F相关器件

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EDJ4216BFBG-JS-F	ELPIDA	获取价格	Differential clock inputs
EDJ4216EFBG	ELPIDA	获取价格	4G bits DDR3L SDRAM
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EDJ5304BASE	ELPIDA	获取价格	512M bits DDR3 SDRAM
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