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EDJ4204BFBG

更新时间: 2024-11-28 12:24:55
品牌 Logo 应用领域
尔必达 - ELPIDA 时钟
页数 文件大小 规格书
32页 526K
描述
Differential clock inputs

EDJ4204BFBG 数据手册

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COVER  
PRELIMINARY DATA SHEET  
4G bits DDR3 SDRAM  
EDJ4204BFBG (1024M words × 4 bits)  
EDJ4208BFBG (512M words × 8 bits)  
EDJ4216BFBG (256M words × 16 bits)  
Specifications  
Features  
• Density: 4G bits  
• Organization  
• Double-data-rate architecture: two data transfers per  
clock cycle  
• The high-speed data transfer is realized by the 8 bits  
prefetch pipelined architecture  
• Bi-directional differential data strobe (DQS and /DQS)  
is transmitted/received with data for capturing data at  
the receiver  
— 128M words × 4 bits × 8 banks (EDJ4204BFBG)  
— 64M words × 8 bits × 8 banks (EDJ4208BFBG)  
— 32M words × 16 bits × 8 banks (EDJ4216BFBG)  
• Package  
— 78-ball FBGA (EDJ4204BFBG, EDJ4208BFBG)  
— 96-ball FBGA (EDJ4216BFBG)  
— Lead-free (RoHS compliant) and Halogen-free  
• Power supply: VDD = 1.5V 0.075V  
• Data rate  
• DQS is edge-aligned with data for READs; center-  
aligned with data for WRITEs  
• Differential clock inputs (CK and /CK)  
• DLL aligns DQ and DQS transitions with CK transitions  
• Commands entered on each positive CK edge; data  
and data mask referenced to both edges of DQS  
— 1866Mbps/1600Mbps/1333Mbps (max)  
• 1KB page size  
• Data mask (DM) for write data  
— Row address: A0 to A15  
— Column address: A0 to A9, A11 (EDJ4204BFBG)  
A0 to A9 (EDJ4208BFBG)  
• Posted /CAS by programmable additive latency for  
better command and data bus efficiency  
• On-Die Termination (ODT) for better signal quality  
— Synchronous ODT  
— Dynamic ODT  
— Asynchronous ODT  
• Multi Purpose Register (MPR) for pre-defined pattern  
read out  
• ZQ calibration for DQ drive and ODT  
• Programmable Partial Array Self-Refresh (PASR)  
• /RESET pin for Power-up sequence and reset function  
• SRT range:  
• 2KB page size (EDJ4216BFBG)  
— Row address: A0 to A14  
— Column address: A0 to A9  
• Eight internal banks for concurrent operation  
• Interface: SSTL_15  
• Burst length (BL): 8 and 4 with Burst Chop (BC)  
• Burst type (BT):  
— Sequential (8, 4 with BC)  
— Interleave (8, 4 with BC)  
• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11, 13  
• /CAS Write Latency (CWL): 5, 6, 7, 8, 9  
— Normal/extended  
• Programmable Output driver impedance control  
• Precharge: auto precharge option for each burst  
access  
• Driver strength: RZQ/7, RZQ/6 (RZQ = 240)  
• Refresh: auto-refresh, self-refresh  
• Refresh cycles  
— Average refresh period  
7.8µs at 0°C TC +85°C  
3.9µs at +85°C < TC +95°C  
• Operating case temperature range  
— TC = 0°C to +95°C  
Document. No. E1923E20 (Ver. 2.0)  
Date Published January 2013 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
©Elpida Memory, Inc. 2012-2013  

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DDR DRAM, 512MX8, 0.255ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78