Datasheet > 存储 > DRAM> EDJ2116DEBG-GN-F

EDJ2116DEBG-GN-F

更新时间： 2024-11-28 12:48:03

品牌	Logo	应用领域
尔必达 - ELPIDA		内存集成电路动态存储器双倍数据速率时钟
页数	文件大小	规格书
33页	404K
描述
2G bits DDR3 SDRAM

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中文翻译

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数据手册
替代型号

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EDJ2116DEBG-GN-F 数据手册

COVER

DATA SHEET

2G bits DDR3 SDRAM

EDJ2108DEBG (256M words × 8 bits)

EDJ2116DEBG (128M words × 16 bits)

Specifications

Features

• Density: 2G bits

• Organization

• Double-data-rate architecture: two data transfers per

clock cycle

• The high-speed data transfer is realized by the 8 bits

prefetch pipelined architecture

• Bi-directional differential data strobe (DQS and /DQS)

is transmitted/received with data for capturing data at

the receiver

• DQS is edge-aligned with data for READs; center-

aligned with data for WRITEs

• Differential clock inputs (CK and /CK)

— 32M words × 8 bits × 8 banks (EDJ2108DEBG)

— 16M words × 16 bits × 8 banks (EDJ2116DEBG)

• Package

— 78-ball FBGA (EDJ2108DEBG)

— 96-ball FBGA (EDJ2116DEBG)

— Lead-free (RoHS compliant) and Halogen-free

• Power supply: VDD, VDDQ = 1.5V ± 0.075V

• Data rate

• DLL aligns DQ and DQS transitions with CK transitions

— 2133Mbps/1866Mbps/1600Mbps/1333Mbps (max)

• Spread Spectrum Clock (SSC)

— Sweep rate: down spread 1% (20kHz to 60kHz)

• 1KB page size (EDJ2108DEBG)

— Row address: A0 to A14

— Column address: A0 to A9

• 2KB page size (EDJ2116DEBG)

— Row address: A0 to A13

• Commands entered on each positive CK edge; data

and data mask referenced to both edges of DQS

• Data mask (DM) for write data

• Posted /CAS by programmable additive latency for

better command and data bus efficiency

• On-Die Termination (ODT) for better signal quality

— Synchronous ODT

— Dynamic ODT

— Asynchronous ODT

— Column address: A0 to A9

• Multi Purpose Register (MPR) for pre-defined pattern

read out

• ZQ calibration for DQ drive and ODT

• /RESET pin for Power-up sequence and reset function

• SRT range:

• Eight internal banks for concurrent operation

• Interface: SSTL_15

• Burst length (BL): 8 and 4 with Burst Chop (BC)

• Burst type (BT):

— Sequential (8, 4 with BC)

— Interleave (8, 4 with BC)

• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11, 13, 14

• /CAS Write Latency (CWL): 5, 6, 7, 8, 9, 10

• Precharge: auto precharge option for each burst

access

— Normal/extended

• Programmable Output driver impedance control

• Seamless BL4 access with bank-grouping

— Applied only for DDR3-1333 and 1600

• Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)

• Refresh: auto-refresh, self-refresh

• Refresh cycles

— Average refresh period

7.8µs at 0°C ≤ TC ≤ +85°C

3.9µs at +85°C < TC ≤ +95°C

• Operating case temperature range

— TC = 0°C to +95°C

Document. No. E1712E60 (Ver. 6.0)

Date Published October 2013 (K) Japan

Printed in Japan

URL: http://www.elpida.com

12 3 4 5 6 7...33

中文翻译

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EDJ2116DEBG-GN-F 替代型号

型号	品牌	替代类型	描述	数据表
H5TQ2G63BFR-PBC	HYNIX	功能相似	DDR DRAM, 128MX16, 20ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96

与EDJ2116DEBG-GN-F相关器件

型号	品牌	获取价格	描述	数据表
EDJ2116DEBG-JQ-F	ELPIDA	获取价格	DDR DRAM, 128MX16, 0.195ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
EDJ2116DEBG-JS-F	ELPIDA	获取价格	2G bits DDR3 SDRAM
EDJ2116DEBG-MQ-F	ELPIDA	获取价格	DDR DRAM, 128MX16, 0.18ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
EDJ2116DEBG-MU-F	ELPIDA	获取价格	2G bits DDR3 SDRAM
EDJ2116EEBG	ELPIDA	获取价格	2G bits DDR3L SDRAM
EDJ2116EEBG-DJ-F	ELPIDA	获取价格	Differential clock inputs
EDJ2116EEBG-GN-F	ELPIDA	获取价格	Differential clock inputs
EDJ2116EEBG-JS-F	ELPIDA	获取价格	Differential clock inputs
EDJ4204BFBG	ELPIDA	获取价格	Differential clock inputs
EDJ4204BFBG-DJ-F	ELPIDA	获取价格	Differential clock inputs

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