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EDJ2108BDBG-DJ-F PDF预览

EDJ2108BDBG-DJ-F

更新时间: 2024-11-28 12:51:35
品牌 Logo 应用领域
尔必达 - ELPIDA 时钟
页数 文件大小 规格书
30页 447K
描述
Differential clock inputs

EDJ2108BDBG-DJ-F 数据手册

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COVER  
DATA SHEET  
2G bits DDR3 SDRAM  
EDJ2104BDBG (512M words × 4 bits)  
EDJ2108BDBG (256M words × 8 bits)  
Specifications  
Features  
• Density: 2G bits  
• Organization  
• Double-data-rate architecture: two data transfers per  
clock cycle  
• The high-speed data transfer is realized by the 8 bits  
prefetch pipelined architecture  
• Bi-directional differential data strobe (DQS and /DQS)  
is transmitted/received with data for capturing data at  
the receiver  
• DQS is edge-aligned with data for READs; center-  
aligned with data for WRITEs  
• Differential clock inputs (CK and /CK)  
— 64M words × 4 bits × 8 banks (EDJ2104BDBG)  
— 32M words × 8 bits × 8 banks (EDJ2108BDBG)  
• Package  
— 78-ball FBGA (EDJ2104BDBG, EDJ2108BDBG)  
— Lead-free (RoHS compliant) and Halogen-free  
• Power supply: VDD = 1.5V 0.075V  
• Data rate  
— 1866Mbps/1600Mbps/1333Mbps/1066Mbps/  
800Mbps (max)  
• 1KB page size  
• DLL aligns DQ and DQS transitions with CK transitions  
• Commands entered on each positive CK edge; data  
and data mask referenced to both edges of DQS  
— Row address: A0 to A14  
• Data mask (DM) for write data  
— Column address: A0 to A9, A11 (EDJ2104BDBG)  
A0 to A9 (EDJ2108BDBG)  
• Posted /CAS by programmable additive latency for  
better command and data bus efficiency  
• On-Die Termination (ODT) for better signal quality  
— Synchronous ODT  
• Eight internal banks for concurrent operation  
• Interface: SSTL_15  
— Dynamic ODT  
— Asynchronous ODT  
• Burst length (BL): 8 and 4 with Burst Chop (BC)  
• Burst type (BT):  
• Multi Purpose Register (MPR) for pre-defined pattern  
read out  
— Sequential (8, 4 with BC)  
— Interleave (8, 4 with BC)  
• ZQ calibration for DQ drive and ODT  
• Programmable Partial Array Self-Refresh (PASR)  
• /RESET pin for Power-up sequence and reset function  
• SRT range:  
• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11, 13  
• /CAS Write Latency (CWL): 5, 6, 7, 8, 9  
• Precharge: auto precharge option for each burst  
access  
— Normal/extended  
• Programmable Output driver impedance control  
• Driver strength: RZQ/7, RZQ/6 (RZQ = 240)  
• Refresh: auto-refresh, self-refresh  
• Refresh cycles  
— Average refresh period  
7.8µs at 0°C TC +85°C  
3.9µs at +85°C < TC +95°C  
• Operating case temperature range  
— TC = 0°C to +95°C  
Document. No. E1772E40 (Ver. 4.0)  
Date Published December 2012 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
©Elpida Memory, Inc. 2011-2012  

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