5秒后页面跳转
DSEI2X101-12 PDF预览

DSEI2X101-12

更新时间: 2024-11-17 22:22:07
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
2页 82K
描述
Fast Recovery Epitaxial Diode (FRED)

DSEI2X101-12 数据手册

 浏览型号DSEI2X101-12的Datasheet PDF文件第2页 
DSEI 2x101 IFAVM = 2x91 A  
VRRM = 1200 V  
Fast Recovery  
Epitaxial Diode (FRED)  
trr  
= 40 ns  
AC-1  
IK-10  
VRSM  
V
VRRM  
V
Type  
1200  
1200  
DSEI 2x 101-12P  
LN-9  
VX-18  
D5  
Symbol  
IFRMS  
Conditions  
Maximum Ratings (per diode)  
Features  
• 2 independent FRED in 1 package  
• Isolation voltage 3000 V~  
• Planar passivated chips  
• Leads suitable for PC board soldering  
• Very short recovery time  
TVJ = TVJM  
130  
91  
tbd  
A
A
A
IFAVM  
IFRM  
TC = 50°C; rectangular; d = 0.5  
tP < 10 µs; rep. rating; pulse width limited by TVJM  
IFSM  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
900  
A
• Soft recovery behaviour  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
Applications  
• Antiparallel diode for high frequency  
switching devices  
Ptot  
TC = 25°C  
250  
W
• Anti saturation diode  
• Snubber diode  
VISOL  
50/60 Hz, RMS  
IISOL 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
• Free wheeling diode in converters  
and motor control circuits  
• Rectifiers in switch mode power  
supplies (SMPS)  
• Inductive heating and melting  
• Uninterruptible power supplies (UPS)  
• Ultrasonic cleaners and welders  
Md  
Mounting torque (M4)  
1.5 - 2.0  
14 - 18  
Nm  
lb.in.  
Weight  
Symbol  
24  
g
Conditions  
Characteristic Values (per diode)  
typ.  
max.  
Advantages  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 25°C VR = 0.8 • VRRM  
TVJ = 125°C VR = 0.8 • VRRM  
3.0  
1.5  
15  
mA  
mA  
mA  
• Easy to mount with two screws  
• Space and weight savings  
• Improved temperature and power  
cycling capability  
VF  
IF = 100 A; TVJ = 150°C  
TVJ = 25°C  
1.61  
1.87  
V
V
• Low noise switching  
• Small and light weight  
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
1.01  
6.1  
V
mΩ  
RthJC  
RthCK  
0.5  
60  
30  
K/W  
K/W  
0.05  
trr  
IF = 1 A; -di/dt = 400 A/µs  
VR = 30 V; TVJ = 25°C  
40  
ns  
IRM  
VR = 100 V; IF = 75 A; -diF/dt = 200 A/µs  
24  
A
L 0.05 µH; TVJ = 100°C  
dS  
dA  
a
Creeping distance on surface  
Creeping distance in air  
Allowable acceleration  
min. 11.2  
min. 11.2  
max. 50  
mm  
mm  
m/s²  
IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5  
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions  
© 2001 IXYS All rights reserved  
1 - 2  

与DSEI2X101-12相关器件

型号 品牌 获取价格 描述 数据表
DSEI2X101-12A IXYS

获取价格

Fast Recovery Epitaxial Diode (FRED)
DSEI2X101-12A LITTELFUSE

获取价格

FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI2X101-12P IXYS

获取价格

Fast Recovery Epitaxial Diode (FRED)
DSEI2X101-12P LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 2 Element, 91A, 1200V V(RRM), Silicon, ECOPAC-12
DSEI2X121 IXYS

获取价格

Fast Recovery Epitaxial Diode (FRED)
DSEI2X121-02A IXYS

获取价格

Fast Recovery Epitaxial Diode (FRED)
DSEI2X121-02A LITTELFUSE

获取价格

FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI2X121-02P LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 2 Element, 123A, 200V V(RRM), Silicon, ECOPAC-12
DSEI2X161-02A ETC

获取价格

ARRAY OF INDEPENDENT DIODES|SOT-227B
DSEI2X161-02P LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 2 Element, 165A, 600V V(RRM), Silicon, ECOPAC-12