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DSEE15-04CC PDF预览

DSEE15-04CC

更新时间: 2024-09-17 02:50:55
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THINKISEMI /
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2页 277K
描述
15.0 Ampere Insulated Dual Tandem Structure In Series Ultra Fast Recovery Rectifiers

DSEE15-04CC 数据手册

 浏览型号DSEE15-04CC的Datasheet PDF文件第2页 
DSEE15-04CC thru DSEE15-24CC  
DSEE15-04CC thru DSEE15-24CC  
Pb Free Plating Product  
15.0 Ampere Insulated Dual Tandem Structure In Series Ultra Fast Recovery Rectifiers  
ITO-220AB/TO-220F-3L  
Unit:inch(mm)  
Features  
ThinkiSemi latest&matured process FRD/FRED  
Low forward voltage drop  
High current capability  
.189(4.8)  
.165(4.2)  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
.130(3.3)  
.114(2.9)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Car Audio Amplifiers and Sound Device Systems  
Plating Power Supply,Motor Control,UPS and SMPS etc.  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
Case:Isolated fully plastic ITO-220AB/TO-220F-3L package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202 method 208  
Polarity: As marked on diode body  
Mounting position: Any  
(2.55)  
Weight: 2.0 gram approximately  
Doubler  
Series  
Negative  
Positive  
Tandem Polarity  
Prefix "DSED"  
Tandem Polarity  
Prefix "DSEE"  
Common Cathode  
Prefix "DSEC"  
Common Anode  
Prefix "DSEA"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
PARAMETER  
SYMBOL  
DSEE15-04CC DSEE15-08CC DSEE15-12CC DSEE15-16CC DSEE15-20CC  
DSEE15-24CC  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200x2  
140x2  
200x2  
400x2  
280x2  
400x2  
600x2  
420x2  
600x2  
800x2  
560x2  
800x2  
1000x2  
700x2  
1200x2  
840x2  
V
V
V
Maximum DC Blocking Voltage  
1000x2  
1200x2  
Maximum Average Forward Rectified  
Current TC=125℃  
15.0  
300  
IF(AV)  
IFSM  
A
A
V
(Total Device 2x15.0A=30.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)(Per Diode/Per Leg)  
Maximum Instantaneous Forward Voltage  
@15.0A(Per Diode/Per Leg)  
VF  
(Typical)  
1.50-1.70  
0.85-0.95  
1.00-1.25  
1.25-1.50  
Maximum DC Reverse Current @TJ=25℃  
At Rated DC Blocking Voltage @TJ=125℃  
1.0  
100  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
25-50  
50-75  
Trr  
CJ  
nS  
pF  
150  
3.0  
RθJC  
/W  
Operating Junction and Storage  
Temperature Range  
-55 to +175  
TJ,TSTG  
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
Rev.11T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  

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