Datasheet > DSEI-12

DSEI-12

更新时间： 2024-09-16 12:51:55

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	56K
描述
Fast Recovery Epitaxial Dioder (FRED)

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中文翻译

获取价格

数据手册

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DSEI-12 数据手册

DSEI 12 I_FAVM= 11 A

V_RRM= 1200 V

Fast Recovery

Epitaxial Diode (FRED)

t_rr

= 50 ns

TO-220 AC

V_RSM

V_RRM

Type

1200

DSEI 12-12A

A = Anode, C = Cathode

Symbol

I_FRMS

Test Conditions

Maximum Ratings

Features

①

International standard package

T_VJ= T_VJM

150

I_FAVM

I_FRM

①

T_C= 100°C; rectangular, d = 0.5

t_P< 10 ms; rep. rating, pulse width limited by T_VJM

JEDEC TO-220 AC

①

Planar passivated chips

Very short recovery time

Extremely low switching losses

Low I_RM-values

Soft recovery behaviour

Epoxy meets UL 94V-0

I_FSM

T_VJ= 45°C; t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

T_VJ= 150°C; t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

I²t

T_VJ= 45°C

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

A²s

Applications

T_VJ= 150°C; t = 10 ms (50 Hz), sine

A²s

t = 8.3 ms (60 Hz), sine

①

Antiparallel diode for high frequency

switching devices

T_VJ

T_VJM

T_stg

-40...+150

150

-40...+150

°C

①

Anti saturation diode

Snubber diode

Free wheeling diode in converters

and motor control circuits

Rectifiers in switch mode power

supplies (SMPS)

Inductive heating and melting

Uninterruptible power supplies (UPS)

Ultrasonic cleaners and welders

P_tot

M_d

T_C= 25°C

0.4...0.6

①

Mounting torque

Weight

Symbol

I_R

①

Test Conditions

Characteristic Values

max.

typ.

Advantages

T_VJ= 25°C

T_VJ= 125°C V_R= 0.8 • V_RRM

V_R= V_RRM

V_R= 0.8 • V_RRM

250

150

①

High reliability circuit operation

Low voltage peaks for reduced

protection circuits

Low noise switching

Low losses

Operating at lower temperature or

space saving by reduced cooling

①

V_F

I_F= 12 A;

T_VJ= 150°C

T_VJ= 25°C

2.2

2.6

①

V_T0

r_T

For power-loss calculations only

T_VJ= T_VJM

1.65

46.2

①

R_thJC

R_thCK

R_thJA

1.6

K/W

0.5

t_rr

I_F= 1 A; -di/dt = 50 A/ms; V_R= 30 V; T_VJ= 25°C

I_RM

V_R= 540 V; I_F= 12 A; -di_F/dt = 100 A/ms

L £ 0.05 mH; T_VJ= 100°C

6.5

7.2

① I_FAVMrating includes reverse blocking losses at T_VJM, V_R= 0.8 V_RRM, duty cycle d = 0.5

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

1 - 2

中文翻译

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与DSEI-12相关器件

型号	品牌	获取价格	描述	数据表
DSEI120	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED)
DSEI1-20.000MHZ	MMD	获取价格	Series - Fundamental Quartz Crystal, 20MHz Nom, HC-49/US, SMD, 2 PIN
DSEI1-20.000MHZ-3	MMD	获取价格	Series - Fundamental Quartz Crystal, 20MHz Nom, HC-49/US, SMD, 3 PIN
DSEI1-20.000MHZ-T	MMD	获取价格	Series - Fundamental Quartz Crystal, 20MHz Nom, HC-49/US, SMD, 2 PIN
DSEI120-06A	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED)
DSEI120-06A	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI120-12A	IXYS	获取价格	Fast Recovery Epitaxial Diode (FRED)
DSEI120-12A	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。
DSEI120-12AZ	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, TO-268AA,
DSEI120-12AZ	LITTELFUSE	获取价格	FRED低Vf系列提供改进的正向电压特性和高达1200V的击穿电压。

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