Datasheet > DSA400100A

DSA400100A

更新时间： 2024-09-18 09:10:47

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
4页	510K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, NS-B2-B-B, 3 PIN

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DSA400100A 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

DSA4001

Silicon PNP epitaxial planar type

For general ampliﬁcation

Complementary to DSC4001

DSA2001 in NS through hole type package

 Features

 Package

ꢀCode

 High forward current transfer ratio h_FEwith excellent linearity

 Low collector-emitter saturation voltage V_CE(sat)

 Contributes to miniaturization of sets, mount area reduction

 Eco-friendly Halogen-free package

NS-B2-B-B

ꢀPin Name

1. Emitter

2. Collector

3. Base

 Packaging

Radial type : 5000 pcs / carton

 Marking Symbol: A1

 Absolute Maximum Ratings T_a= 25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

–60

Unit

–50

–7

–100

–200

300

Peak collector current

I_CP

Collector power dissipation

Junction temperature

P_C

°C

T_j

150

Storage temperature

stg

–55 to +150

 Electrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

Conditions

Min

–60

–50

–7

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio ^*

V_CBOI_C= –10 mA, I_E= 0

V_CEOI_C= –2 mA, I_B= 0

V_EBOI_E= –10 mA, I_C= 0

I_CBO

I_CEO

h_FE

V_CB= –20 V, I_E= 0

V_CE= –10 V, I_B= 0

V_CE= –10 V, I_C= –2 mA

– 0.1

–100

460



210

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= –100 mA, I_B= –10 mA

– 0.2

150

– 0.5

f_T

V_CE= –10 V, I_C= –2 mA

MHz

Collector output capacitance

C_ob

V_CB= –10 V, I_E= 0, f = 1 MHz

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classiﬁcation

Code

Rank

No-rank

210 to 460

h_FE

210 to 340

A1R

290 to 460

A1S

Marking Symbol

Product of no-rank is not classiﬁed and have no marking symbol for rank.

Publication date: December 2011

Ver. AED

12 3 4

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与DSA400100A相关器件

型号	品牌	获取价格	描述	数据表
DSA4001R0A	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
DSA4001S	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1-B
DSA4002	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), PNP, ROHS COMPLIANT, NS-B1-B, 3 PIN
DSA400200A	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN
DSA40020A	PANASONIC	获取价格	Transistor
DSA4002R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), PNP, ROHS COMPLIANT, NS-B1-B, 3 PIN
DSA4002R0A	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN
DSA4005	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FR
DSA400500A	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
DSA4005O0A	PANASONIC	获取价格	Transistor

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