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DSA400200A

更新时间： 2024-09-17 19:36:31
品牌 Logo 应用领域
松下 - PANASONIC 放大器晶体管
页数 文件大小 规格书
3页 483K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, NS-B2-B-B, 3 PIN

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DSA400200A 技术参数

生命周期：Obsolete包装说明：IN-LINE, R-PSIP-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.8
最大集电极电流 (IC)：0.5 A集电极-发射极最大电压：50 V
配置：SINGLE最小直流电流增益 (hFE)：120
JESD-30 代码：R-PSIP-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
极性/信道类型：PNP表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：130 MHzBase Number Matches：1

DSA400200A 数据手册

 浏览型号DSA400200A的Datasheet PDF文件第2页浏览型号DSA400200A的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DSA4002  
Silicon PNP epitaxial planar type  
For general amplification  
Complementary to DSC4002  
DSA2002 in NS through hole type package  
Features  
Package  
ꢀCode  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, mount area reduction  
Eco-friendly Halogen-free package  
NS-B2-B  
Package dimension clicks here.→  
Click!  
Packaging  
ame  
ter  
2. Collector  
3. Base  
DSA4002×0A Radial type : 5000 pcs / carton  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector pen)  
Collector current  
Symbol  
VCBO  
VCO  
EBO  
IC  
ng  
–60  
Unit  
V
Marking Symbol: A2  
–50  
V
–5  
V
–50
–1  
mA  
A
Peak collector current  
ICP  
Collector power dissipaon  
Junction temperaure  
300  
mW  
°C  
°C  
150  
Storage tperature  
T
stg  
–55 to +150  
Electrical Characteristics Ta = 25°C±3°C  
Parer  
Symbol  
Conditions  
Min  
–60  
–50  
–5  
Typ  
Max  
Unit  
V
Collector-base open)  
Collector-emitter voopen)  
Emitter-base voltage (Coctor open)  
Collector-base cutoff current (Emitter open)  
VCBO IC = –10 mA, IE = 0  
VCEO IC = –2 mA, IB = 0  
VEBO IE = –10 mA, IC = 0  
V
V
ICBO  
VCB = –20 V, IE = 0  
– 0.1  
340  
mA  
2
*
hFE1  
hFE2  
VCE = –10 V, IC = –150 mA  
VCE = –10 V, IC = –500 mA  
120  
40  
1
Forward current transfer ratio *  
1
Collector-emitter saturation voltage *  
VCE(sat) IC = –300 mA, IB = –30 mA  
VBE(sat) IC = –300 mA, IB = –30 mA  
– 0.2  
– 0.9  
130  
– 0.6  
– 1.5  
V
V
1
Base-emitter saturation voltage *  
Transition frequency  
fT  
VCE = –10 V, IC = –50 mA  
MHz  
Collector output capacitance  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
7.3  
15  
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classification  
*
Code  
Rank  
R
R
S
S
0
No-rank  
120 to 340  
A2  
hFE1  
120 to 240  
A2R  
170 to 340  
A2S  
Marking Symbol  
Product of no-rank is not classified and have no marking symbol for rank.  
Publication date: January 2012  
Ver. AED  
1
123

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