Datasheet > DSA40020A

DSA40020A

更新时间： 2024-11-21 20:01:59

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	472K
描述
Transistor

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DSA40020A 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

DSA40020A 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

DSA4002

Silicon PNP epitaxial planar type

For general ampliﬁcation

Complementary to DSC4002

DSA2002 in NS through hole type package

 Features

 Package

ꢀCode

 High forward current transfer ratio h_FEwith excellent linearity

 Low collector-emitter saturation voltage V_CE(sat)

 Contributes to miniaturization of sets, mount area reduction

 Eco-friendly Halogen-free package

NS-B2-B

Package dimension clicks here.→

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 Packaging

ꢀPin Name

1. Emitter

2. Collector

3. Base

DSA4002×0A Radial type : 5000 pcs / carton

 Absolute Maximum Ratings T_a= 25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

–60

Unit

 Marking Symbol: A2

–50

–5

–500

–1

Peak collector current

I_CP

Collector power dissipation

Junction temperature

P_C

300

°C

T_j

150

Storage temperature

stg

–55 to +150

 Electrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

Conditions

Min

–60

–50

–5

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

V_CBOI_C= –10 mA, I_E= 0

V_CEOI_C= –2 mA, I_B= 0

V_EBOI_E= –10 mA, I_C= 0

I_CBO

V_CB= –20 V, I_E= 0

– 0.1

340

h_FE1

h_FE2

V_CE= –10 V, I_C= –150 mA

V_CE= –10 V, I_C= –500 mA

120

Forward current transfer ratio ^*



Collector-emitter saturation voltage ^*

V_CE(sat)I_C= –300 mA, I_B= –30 mA

V_BE(sat)I_C= –300 mA, I_B= –30 mA

– 0.2

– 0.9

130

– 0.6

– 1.5

Base-emitter saturation voltage ^*

Transition frequency

f_T

V_CE= –10 V, I_C= –50 mA

MHz

Collector output capacitance

C_ob

V_CB= –10 V, I_E= 0, f = 1 MHz

7.3

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

2: Rank classiﬁcation

Code

Rank

No-rank

120 to 340

h_FE1

120 to 240

A2R

170 to 340

A2S

Marking Symbol

Product of no-rank is not classiﬁed and have no marking symbol for rank.

Publication date: January 2012

Ver. AED

12 3

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