Datasheet > DSA40020A

DSA40020A

更新时间： 2024-11-05 20:01:59

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	472K
描述
Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

DSA40020A 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

DSA40020A 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

DSA4002

Silicon PNP epitaxial planar type

For general ampliﬁcation

Complementary to DSC4002

DSA2002 in NS through hole type package

 Features

 Package

ꢀCode

 High forward current transfer ratio h_FEwith excellent linearity

 Low collector-emitter saturation voltage V_CE(sat)

 Contributes to miniaturization of sets, mount area reduction

 Eco-friendly Halogen-free package

NS-B2-B

Package dimension clicks here.→

Click!

 Packaging

ꢀPin Name

1. Emitter

2. Collector

3. Base

DSA4002×0A Radial type : 5000 pcs / carton

 Absolute Maximum Ratings T_a= 25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

–60

Unit

 Marking Symbol: A2

–50

–5

–500

–1

Peak collector current

I_CP

Collector power dissipation

Junction temperature

P_C

300

°C

T_j

150

Storage temperature

stg

–55 to +150

 Electrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

Conditions

Min

–60

–50

–5

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

V_CBOI_C= –10 mA, I_E= 0

V_CEOI_C= –2 mA, I_B= 0

V_EBOI_E= –10 mA, I_C= 0

I_CBO

V_CB= –20 V, I_E= 0

– 0.1

340

h_FE1

h_FE2

V_CE= –10 V, I_C= –150 mA

V_CE= –10 V, I_C= –500 mA

120

Forward current transfer ratio ^*



Collector-emitter saturation voltage ^*

V_CE(sat)I_C= –300 mA, I_B= –30 mA

V_BE(sat)I_C= –300 mA, I_B= –30 mA

– 0.2

– 0.9

130

– 0.6

– 1.5

Base-emitter saturation voltage ^*

Transition frequency

f_T

V_CE= –10 V, I_C= –50 mA

MHz

Collector output capacitance

C_ob

V_CB= –10 V, I_E= 0, f = 1 MHz

7.3

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

2: Rank classiﬁcation

Code

Rank

No-rank

120 to 340

h_FE1

120 to 240

A2R

170 to 340

A2S

Marking Symbol

Product of no-rank is not classiﬁed and have no marking symbol for rank.

Publication date: January 2012

Ver. AED

12 3

中文翻译

下载PDF

与DSA40020A相关器件

型号	品牌	获取价格	描述	数据表
DSA4002R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), PNP, ROHS COMPLIANT, NS-B1-B, 3 PIN
DSA4002R0A	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN
DSA4005	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FR
DSA400500A	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
DSA4005O0A	PANASONIC	获取价格	Transistor
DSA4005R	PANASONIC	获取价格	Transistor,
DSA4005R0A	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
DSA4005S0A	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
DSA480	XPPOWER	获取价格	AC-DC Power Supplies
DSA480PS24	XPPOWER	获取价格	AC-DC Power Supplies

与DSA40020A相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

DSA40020A

DSA40020A 技术参数

DSA40020A 数据手册

与DSA40020A相关器件

与DSA40020A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DSA40020A

DSA40020A 技术参数

DSA40020A 数据手册

与DSA40020A相关器件

与DSA40020A相关文章

您还可以找

您在本页遇到什么问题？