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DSA5001

更新时间： 2024-09-17 21:04:15
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 550K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2-B, 3 PIN

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中文翻译

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DSA5001 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.74最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE
最小直流电流增益 (hFE)：210JESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：150 MHz
Base Number Matches：1

DSA5001 数据手册

 浏览型号DSA5001的Datasheet PDF文件第2页浏览型号DSA5001的Datasheet PDF文件第3页浏览型号DSA5001的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DSA5001  
Silicon PNP epitaxial planar type  
For general amplification  
Complementary to DSC5001  
DSA2001 in SMini3 type package  
Features  
Package  
ꢀCode  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
SMini3-F2-B  
ꢀPin Name  
1. Base  
2. Emitter  
3. Collector  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Marking Symbol: A1  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–60  
Unit  
V
–50  
V
–7  
V
–100  
–200  
150  
mA  
mA  
mW  
°C  
Peak collector current  
ICP  
Collector power dissipation  
Junction temperature  
PC  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
–60  
–50  
–7  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Forward current transfer ratio *  
VCBO IC = –10 mA, IE = 0  
VCEO IC = –2 mA, IB = 0  
VEBO IE = –10 mA, IC = 0  
V
V
ICBO  
ICEO  
hFE  
VCB = –20 V, IE = 0  
VCE = –10 V, IB = 0  
VCE = –10 V, IC = –2 mA  
– 0.1  
–100  
460  
mA  
mA  
210  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = –100 mA, IB = –10 mA  
– 0.2  
150  
– 0.5  
V
fT  
VCE = –10 V, IC = –2 mA  
MHz  
Collector output capacitance  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
2
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Code  
Rank  
R
R
S
S
0
No-rank  
210 to 460  
A1  
hFE  
210 to 340  
A1R  
290 to 460  
A1S  
Marking Symbol  
Product of no-rank is not classified and have no marking symbol for rank.  
Publication date: January 2011  
Ver. CED  
1
1234

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