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DSA4001R0A

更新时间： 2024-11-05 14:49:11
品牌 Logo 应用领域
松下 - PANASONIC 放大器晶体管
页数 文件大小 规格书
4页 510K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, NS-B2-B-B, 3 PIN

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DSA4001R0A 技术参数

生命周期：Obsolete包装说明：IN-LINE, R-PSIP-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.8
Is Samacsys：N最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE
最小直流电流增益 (hFE)：210JESD-30 代码：R-PSIP-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE极性/信道类型：NPN
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：150 MHz
Base Number Matches：1

DSA4001R0A 数据手册

 浏览型号DSA4001R0A的Datasheet PDF文件第2页浏览型号DSA4001R0A的Datasheet PDF文件第3页浏览型号DSA4001R0A的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DSA4001  
Silicon PNP epitaxial planar type  
For general amplification  
Complementary to DSC4001  
DSA2001 in NS through hole type package  
Features  
Package  
ꢀCode  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, mount area reduction  
Eco-friendly Halogen-free package  
NS-B2-B-B  
ꢀPin Name  
mitter  
ctor  
e  
Packaging  
Radial type : 5000 pcs / carton  
Marking Symbol: A1  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open
Collector current  
Symbo
VBO  
VCEO  
VEBO  
IC  
ating  
–60  
Unit  
V
–50  
V
–7  
V
–100  
–200  
300  
mA  
A
Peak collector current  
Collector power issipion  
Junction mperatur
mW  
°C  
°C  
Tj  
150  
orage temeratre  
T
stg  
–55 to +150  
Electrical Chastics Ta = 25°C±3°C  
Symbol  
Conditions  
Min  
–60  
–50  
–7  
Typ  
Max  
Unit  
V
Collector-base voltagr open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Forward current transfer ratio *  
VCBO IC = –10 mA, IE = 0  
VCEO IC = –2 mA, IB = 0  
VEBO IE = –10 mA, IC = 0  
V
V
ICBO  
ICEO  
hFE  
VCB = –20 V, IE = 0  
VCE = –10 V, IB = 0  
VCE = –10 V, IC = –2 mA  
– 0.1  
–100  
460  
mA  
mA  
210  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = –100 mA, IB = –10 mA  
– 0.2  
150  
– 0.5  
V
fT  
VCE = –10 V, IC = –2 mA  
MHz  
Collector output capacitance  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
2
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Code  
Rank  
R
R
S
S
0
No-rank  
210 to 460  
A1  
hFE  
210 to 340  
A1R  
290 to 460  
A1S  
Marking Symbol  
Product of no-rank is not classified and have no marking symbol for rank.  
Publication date: December 2011  
Ver. AED  
1
1234

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