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DSA4002

更新时间： 2024-11-18 20:01:59
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 472K
描述
Small Signal Bipolar Transistor, 0.5A I(C), PNP, ROHS COMPLIANT, NS-B1-B, 3 PIN

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DSA4002 技术参数

是否Rohs认证： 符合生命周期：Not Recommended
包装说明：IN-LINE, R-PSIP-T3针数：3
Reach Compliance Code：compliant风险等级：5.8
最大集电极电流 (IC)：0.5 A配置：Single
最小直流电流增益 (hFE)：120JESD-30 代码：R-PSIP-T3
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：0.3 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

DSA4002 数据手册

 浏览型号DSA4002的Datasheet PDF文件第2页浏览型号DSA4002的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DSA4002  
Silicon PNP epitaxial planar type  
For general amplification  
Complementary to DSC4002  
DSA2002 in NS through hole type package  
Features  
Package  
ꢀCode  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, mount area reduction  
Eco-friendly Halogen-free package  
NS-B2-B  
Package dimension clicks here.→  
Click!  
Packaging  
ꢀPin Name  
1. Emitter  
2. Collector  
3. Base  
DSA4002×0A Radial type : 5000 pcs / carton  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–60  
Unit  
V
Marking Symbol: A2  
–50  
V
–5  
V
–500  
–1  
mA  
A
Peak collector current  
ICP  
Collector power dissipation  
Junction temperature  
PC  
300  
mW  
°C  
°C  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
–60  
–50  
–5  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
VCBO IC = –10 mA, IE = 0  
VCEO IC = –2 mA, IB = 0  
VEBO IE = –10 mA, IC = 0  
V
V
ICBO  
VCB = –20 V, IE = 0  
– 0.1  
340  
mA  
2
*
hFE1  
hFE2  
VCE = –10 V, IC = –150 mA  
VCE = –10 V, IC = –500 mA  
120  
40  
1
Forward current transfer ratio *  
1
Collector-emitter saturation voltage *  
VCE(sat) IC = –300 mA, IB = –30 mA  
VBE(sat) IC = –300 mA, IB = –30 mA  
– 0.2  
– 0.9  
130  
– 0.6  
– 1.5  
V
V
1
Base-emitter saturation voltage *  
Transition frequency  
fT  
VCE = –10 V, IC = –50 mA  
MHz  
Collector output capacitance  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
7.3  
15  
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classification  
*
Code  
Rank  
R
R
S
S
0
No-rank  
120 to 340  
A2  
hFE1  
120 to 240  
A2R  
170 to 340  
A2S  
Marking Symbol  
Product of no-rank is not classified and have no marking symbol for rank.  
Publication date: January 2012  
Ver. AED  
1
123

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