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DSA3G01 PDF预览

DSA3G01

更新时间: 2024-11-07 18:25:39
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 542K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN

DSA3G01 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.78最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

DSA3G01 数据手册

 浏览型号DSA3G01的Datasheet PDF文件第2页浏览型号DSA3G01的Datasheet PDF文件第3页浏览型号DSA3G01的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DSA3G01  
Silicon PNP epitaxial planar type  
For high-frequency amplication  
DSA9G01 in SSSMini3 type package  
Package  
Code  
Features  
High transition frequency fT  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
SSSMini3-F2-B  
Pin Name  
1. Base  
Packaging  
2. Emitter  
3. Collector  
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)  
Absolute Maximum Ratings Ta = 25°C  
Marking Symbol: A4  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–30  
Unit  
V
–20  
V
–5  
V
–30  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
PC  
100  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Base-emitter voltage  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
VBE  
ICBO  
ICEO  
IEBO  
hFE  
VCE = –10 V, IC = –1 mA  
VCB = –10 V, IE = 0  
– 0.7  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio *  
– 0.1  
–100  
–10  
µA  
µA  
µA  
VCE = –20 V, IB = 0  
VEB = –5 V, IC = 0  
VCE = –10 V, IC = –1 mA  
70  
220  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = –10 mA, IB = –1 mA  
– 0.1  
300  
V
fT  
VCE = –10 V, IC = –1 mA  
150  
MHz  
Reverse transfer capacitance  
(Common emitter)  
Cre  
VCE = –10 V, IC = –1 mA, f = 10.7 MHz  
1.0  
pF  
Noise gure  
NF  
Zrb  
VCE = –10 V, IC = –1 mA, f = 5 MHz  
VCE = –10 V, IC = –1 mA, f = 2 MHz  
2.8  
22  
dB  
Reverse transfer impedance  
W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: September 2010  
Ver. AED  
1

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