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DN2470_07 PDF预览

DN2470_07

更新时间: 2024-09-14 03:30:07
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
3页 413K
描述
N-Channel Depletion-Mode Vertical DMOS FET

DN2470_07 数据手册

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DN2470  
N-Channel Depletion-Mode Vertical DMOS FET  
Features  
General Description  
The DN2470 is a low threshold depletion-mode (normally-on)  
transistor utilizing an advanced vertical DMOS structure and  
Supertex’s well-proven silicon-gate manufacturing process.  
This combination produces a device with the power handling  
capabilities of bipolar transistors and with the high input  
impedance and positive temperature coefficient inherent  
in MOS devices. Characteristic of all MOS structures, this  
device is free from thermal runaway and thermally-induced  
secondary breakdown.  
High input impedance  
Low input capacitance  
Fast switching speeds  
Low on resistance  
Free from secondary breakdown  
Low input and output leakage  
Applications  
Supertex’s vertical DMOS FET is ideally suited to a wide  
range of switching and amplifying applications where very  
low threshold voltage, high breakdown voltage, high input  
impedance, low input capacitance, and fast switching speeds  
are desired.  
Normally-on switches  
Solid state relays  
Converters  
Linear amplifiers  
Constant current sources  
Battery operated systems  
Telecom  
Ordering Information  
Package Options  
TO-252 (D-PAK)  
DN2470K4-G  
BVDSX/BVDGX  
RDS(ON) (max)  
IDSS(min)  
700V  
42Ω  
500mA  
Package Option  
Absolute Maximum Ratings  
Parameter  
Drain  
Value  
BVDSX  
BVDGX  
20V  
Drain-to-source voltage  
Drain-to-gate voltage  
Gate-to-source voltage  
Operating and storage  
temperature  
-55OC to +150OC  
Soldering temperature*  
300OC  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
Gate  
Source  
TO-252 (D-PAK)  
(top view)  
*Distance of 1.6mm from case for 10 seconds.  

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