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DN2530 PDF预览

DN2530

更新时间: 2023-12-06 20:11:05
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
13页 653K
描述
The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertic

DN2530 数据手册

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DN2530  
N-Channel, Depletion-Mode, Vertical DMOS FET  
Features  
Description  
• High-input impedance  
The DN2530 is a low-threshold, depletion-mode, nor-  
mally-on transistor that utilizes an advanced vertical  
DMOS structure and a well-proven silicon-gate manu-  
facturing process. This combination produces a device  
with the power-handling capabilities of bipolar transis-  
tors, plus the high-input impedance and positive-tem-  
• Low-input capacitance  
• Fast switching speeds  
• Low on-resistance  
• Free from secondary breakdown  
• Low input and output leakage  
perature  
coefficient  
inherent  
in  
Metal-Oxide  
Semiconductor (MOS) devices. Characteristic of all  
MOS structures, this device is free from thermal run-  
away and thermally-induced secondary breakdown.  
Applications  
• Normally-on switches  
• Solid state relays  
• Converters  
Vertical DMOS Field-Effect Transistors (FETs) are ide-  
ally suited to a wide range of switching and amplifying  
applications where high breakdown-voltage, high-input  
impedance, low-input capacitance, and fast switching  
speeds are desired.  
• Linear amplifiers  
• Constant current sources  
• Power supply circuits  
Telecom  
Package Types  
DRAIN  
DRAIN  
SOURCE  
SOURCE  
DRAIN  
GATE  
GATE  
TO-92  
TO-243AA (SOT-89)  
See Table 2-1 for pin information  
2016 Microchip Technology Inc.  
DS20005451A-page 1  

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