DN2530
1.0
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS†
Drain-to-source voltage.........................................................................................................................................BVDSX
Drain-to-gate voltage.............................................................................................................................................BVDGX
Gate-to-source voltage............................................................................................................................................ ±20V
Operating and Storage Temperature.......................................................................................................... -55 to 150 °C
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC AND AC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, for all specifications TA = +25°C
Parameter
Symbol
Min
Typ
Max Units Conditions
DC Parameters (Note 1, unless otherwise stated)
Drain-to-source breakdown voltage
Gate-to-source off voltage
BVDSX
VGS(OFF)
∆VGS(OFF)
IGSS
300
-
-
-
-
-
-
V
V
VGS= -5.0V, ID= 100 µA
VDS= 25V, ID= 10 µA
-1.0
-3.5
VGS(OFF) change with temperature
Gate body leakage current
-
-
-
-4.5 mV/°C VDS= 25V, ID= 10 µA(Note 2)
100
10
nA
µA
VGS= ±20V, VDS= 0V
VDS= Max rating, VGS= -10V
Drain-to-source leakage current
ID(OFF)
V
DS= 0.8 Max Rating,
-
-
-
-
-
1.0
-
mA
VGS= -10V, TA= 125°C (Note 2)
Saturated drain-to-source current
IDSS
200
mA VGS= 0V, VDS= 25V
VGS= 0V, ID= 150 mA
Static drain-to-source on-state
resistance
RDS(ON)
∆RDS(ON)
-
-
12
1.1
Ω
Change in RDS(ON) with temperature
AC Parameters (Note 2)
Forward transconductance
Input capacitance
%/°C VGS= 0V, ID= 150 mA(Note 2)
GFS
CISS
COSS
CRSS
td(ON)
tr
300
-
-
-
-
-
-
-
-
-
mmho VDS= 10V, ID= 150 mA
VGS= -10V,
-
-
-
-
-
-
-
300
30
5
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
pF
VDS= 25V,
f = 1 MHz
10
15
15
20
VDD= 25V,
ID= 150 mA,
RGEN= 25ꢀ,
Rise time
ns
Turn-off delay time
td(OFF)
tf
Fall time
Diode Parameters
VGS = -10V, ISD= 150 mA
(Note 1)
Diode forward voltage drop
Reverse recovery time
VSD
trr
–
–
–
1.8
–
V
600
ns
VGS = -10V, ISD= 1.0A (Note 2)
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2: Specification is obtained by characterization and is not 100% tested.
DS20005451A-page 2
2016 Microchip Technology Inc.
5秒后页面跳转
STM32H743技术深度剖析与应用案例探索
LM321中文资料解析：引脚功能介绍、技术特点、技术特性分析
74HC14芯片资料介绍：性能特性分析、引脚介绍
LM1875芯片手册：功放参数分析、引脚说明、电路设计要点
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
