Datasheet > DMN3070SSN-7

DMN3070SSN-7

更新时间： 2024-11-06 01:13:51

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	249K
描述
Low On-Resistance

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMN3070SSN-7 数据手册

DMN3070SSN

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features

I_D

T_A= +25°C

5.1A



Low On-Resistance

V_(BR)DSS

R_{DS(ON) MAX}

Package

ESD Protected Gate

40mΩ @ V_GS= 10V

50mΩ @ V_GS= 4.5V

30V

SC59

Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

4.3A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R_DS(ON)and yet maintain superior switching

Mechanical Data

)

performance, making it ideal for high efficiency power management

applications.



Case: SC59

Case Material – Molded Plastic. UL Flammability Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish - Matte Tin Solderable per MIL-STD-202,

Applications

Method 208



Load Switch



Terminal Connections: See Diagram

Weight: 0.014 grams (approximate)

DC-DC Converters

Power Management Functions

Drain

2kV

SC59

Body

Diode

Gate

Protection

Diode

Source

ESD PROTECTED

TOP VIEW

Pin Configuration

TOP VIEW

Equivalent Circuit

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN3070SSN-7

SC59

3000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html

Marking Information

N70 = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: Z = 2012

N70

M = Month ex: 9 = September

Date Code Key

Year

2010

2011

2012

2013

2014

2015

2016

2017

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

March 2013

DMN3070SSN

Document number: DS36169 Rev. 2 - 2

12 3 4 5 6

中文翻译

下载PDF

与DMN3070SSN-7相关器件

型号	品牌	获取价格	描述	数据表
DMN3071LFR4	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN30H14DLY	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN30H14DLY-13	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.21A I(D), 300V, 1-Element, N-Channel, Silicon, Met
DMN30H4D0L	DIODES	获取价格	Low Gate Threshold Voltage
DMN30H4D0L_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN30H4D0L-13	DIODES	获取价格	Low Gate Threshold Voltage
DMN30H4D0L-7	DIODES	获取价格	Low Gate Threshold Voltage
DMN30H4D0LFDE	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN30H4D0LFDE-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN30H4D0LFDE-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET