Datasheet > DMN3112S

DMN3112S

更新时间： 2024-09-23 12:30:39

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	176K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET Low Input Capacitance

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DMN3112S 数据手册

Product specification

DMN3112S

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

Mechanical Data

•

Low On-Resistance:

•

Case: SOT23

57mΩ @ V_GS= 10V

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

112mΩ @ V_GS= 4.5V

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Weight: 0.008 grams (approximate)

•

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Drain

SOT23

Gate

Source

Top View

Equivalent Circuit

Top View

Pin Configuration

Ordering Information ^{(Note 3)}

Part Number

DMN3112S-7

DMN3112SQ-7

Qualification

Commercial

Automotive

Case

SOT23

Packaging

3000/Tape & Reel

Notes:

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

Marking Information

MN4 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

MN4

M = Month (ex: 9 = September)

Date Code Key

Year

2008

2009

2010

2011

2012

2013

2014

2015

2016

2017

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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sales@twtysemi.com

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