Datasheet > DMN3112SQ

DMN3112SQ

更新时间： 2024-12-01 14:56:03

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	748K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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DMN3112SQ 数据手册

DMN3112SQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



Low On-Resistance

I_DMax

BV_DSS

R_DS(ON)Max

Low Gate Threshold Voltage

Low Input Capacitance

T_A= +25°C

57mΩ @ V_GS= 10V

112mΩ @ V_GS= 4.5V

5.8A

2.5A

Fast Switching Speed

30V

Low Input/Output Leakage

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

The DMN3112SQ is suitable for automotive applications

requiring specific change control; this part is AEC-Q101

qualified, PPAP capable, and manufactured in IATF 16949

certified facilities.

Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)

)

https://www.diodes.com/quality/product-definitions/

yet maintain superior switching performance, making it ideal for high

efficiency power management applications.

Mechanical Data

Applications



Case: SOT23

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin Annealed Over Copper

Leadframe. Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram



General Purpose Interfacing Switch

Power Management Functions

Boost Application



Analog Switch



Weight: 0.008 grams (Approximate)

Drain

SOT23

Gate

Source

Top View

Pin Configuration

Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

Qualification

Case

Packaging

DMN3112SQ-7

Automotive

SOT23

3000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

MN4 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: I = 2021)

M = Month (ex: 9 = September)

Date Code Key

Year

2014

…

2021

2022

2023

2024

2025

2026

2027

2028

2029

2030

Code

…

Aug

Sep

Oct

Nov

Dec

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

1 of 6

www.diodes.com

August 2021

DMN3112SQ

Document number: DS37481 Rev. 3 -2

12 3 4 5 6

中文翻译

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与DMN3112SQ相关器件

型号	品牌	获取价格	描述	数据表
DMN3112SQ-7	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET Low Input Capacitance
DMN3112SSS	DIODES	获取价格	SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3112SSS-13	DIODES	获取价格	SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3115UDM	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3115UDM_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3115UDM-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3115UDM-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3115UDMQ-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3115UDMQ-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3135LVT	DIODES	获取价格	Low On-Resistance

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