Datasheet > DMN3112S

DMN3112S

更新时间： 2024-11-19 09:54:15

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	178K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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DMN3112S 数据手册

DMN3112S

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Features

Mechanical Data

•

Low On-Resistance:

•

Case: SOT-23

57mΩ @ V_GS= 10V

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

112mΩ @ V_GS= 4.5V

•

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish – Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.008 grams (approximate)

•

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

"Green" Device (Note 3)

•

Qualified to AEC-Q101 Standards for High Reliability

Drain

SOT-23

Gate

Source

Equivalent Circuit

TOP VIEW

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

V_GSS

±20

Drain Current (Note 1)

T_A= 25°C

T_A= 70°C

Pulsed

5.8

4.2

I_D

Drain Current (Note 1)

Body-Diode Continuous Current (Note 1)

2.0

I_DM

I_S

Thermal Characteristics

Characteristic

Symbol

Value

1.4

Unit

Total Power Dissipation (Note 1)

P_D

°C/W

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 1)

Operating and Storage Temperature Range

R_θ

-55 to +150

°C

_J,T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4)

Symbol

Min

Typ

Max

Unit

Test Condition

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

⎯

800

V_GS= 0V, I_D= 250μA

V_DS= 30V, V_GS= 0V

⎯

±80

±800

V_GS= ±20V, V_DS= 0V

V_GS= ±25V, V_DS= 0V

Gate-Body Leakage

I_GSS

⎯

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

1.3

1.9

2.2

V_GS(th)

V_DS= V_GS, I_D= 250μA

⎯

_GS= 10V, I_D= 5.8A

_GS= 4.5V, I_D= 4.2A

112

Static Drain-Source On-Resistance

R_{DS (ON)}

mΩ

Forward Transconductance

Source-Drain Diode Forward Voltage

DYNAMIC CHARACTERISTICS

Input Capacitance

4.7

|Y_fs|

V_SD

⎯

1.1

V_DS= 5V, I_D= 4.2A

V_GS= 0V, I_S= 2.0A

0.78

268

C_iss

C_oss

C_rss

⎯

_DS= 5V, V_GS= 0V

Output Capacitance

f = 1.0MHz

Reverse Transfer Capacitance

Notes:

1. Device mounted on FR-4 PCB. t ≤5 sec.

2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Short duration pulse test used to minimize self-heating effect.

1 of 4

www.diodes.com

July 2008

DMN3112S

Document number: DS31445 Rev. 2 - 2

12 3 4

中文翻译

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