Datasheet > DMN3112SSS

DMN3112SSS

更新时间： 2024-11-19 09:54:15

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
4页	194K
描述
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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DMN3112SSS 数据手册

DMN3112SSS

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

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Features

Mechanical Data

•

Low On-Resistance

•

Case: SOP-8L

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.072g (approximate)

•

57mΩ @ V_GS= 10V

112mΩ @ V_GS= 4.5V

•

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

"Green" Device (Note 4)

Qualified to AEC-Q101 Standards for High Reliability

•

SOP-8L

TOP VIEW

Internal Schematic

TOP VIEW

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

Gate-Source Voltage

V_GSS

±20

Drain Current (Note 1)

Steady

State

T_A= 25°C

T_A= 70°C

4.5

I_D

Pulsed Drain Current (Note 3)

I_DM

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

2.5

Unit

P_D

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

°C/W

°C

R_θ

_J,T_STG

-55 to +150

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Symbol

Min

Typ

Max

Unit

Test Condition

BV_DSS

I_DSS

⎯

800

V_GS= 0V, I_D= 250μA

_DS= 30V, V_GS= 0V

⎯

±80

±800

_GS= ±20V, V_DS= 0V

V_GS= ±25V, V_DS= 0V

Gate-Source Leakage

I_GSS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

2.2

V_GS(th)

⎯

V_DS= V_GS, I_D= 250μA

112

_GS= 10V, I_D= 5.8A

_GS= 4.5V, I_D= 3.7A

Static Drain-Source On-Resistance

R_DS(ON)

⎯

mΩ

Forward Transconductance

Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS

Input Capacitance

2.8

0.8

g_fs

⎯

0.5

⎯

1.2

V_DS= 10V, I_D= 3.7A

V_GS= 0V, I_S= 2.1A

V_SD

268

C_iss

C_oss

C_rss

⎯

_DS= 15V, V_GS= 0V

Output Capacitance

f = 1.0MHz

Reverse Transfer Capacitance

Notes:

1. Device mounted on 2 oz copper pad layout with R_θJA= 50°C/W.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

1 of 4

www.diodes.com

October 2008

DMN3112SSS

Document number: DS31582 Rev. 1 - 2

12 3 4

中文翻译

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