Datasheet > DMN30H4D0L_15

DMN30H4D0L_15

更新时间： 2024-11-06 01:03:23

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	383K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN30H4D0L_15 数据手册

DMN30H4D0L

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low Gate Threshold Voltage

I_D

V_(BR)DSS

R_DS(ON)

T_A= +25°C

Low Input Capacitance

Fast Switching Speed

0.25A

4Ω @ V_GS= 10V

4Ω @ V_GS= 4.5V

300V

Small Surface Mount Package

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

This new generation MOSFET has been designed to minimize the

on-state resistance (R_DS(ON)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Mechanical Data



Case: SOT23

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

Description and Applications



Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Solderable per MIL-STD-202, Method 208



DC-DC Converters

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

Power management functions

Battery Operated Systems and Solid-State Relays

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc



Terminal Connections: See Diagram

Weight: 0.008 grams (approximate)

Top View

Pin Configuration

Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMN30H4D0L-7

DMN30H4D0L-13

Case

SOT23

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

2H = Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Date Code Key

Year

2013

2014

2015

2016

2017

2018

2019

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

February 2014

DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

12 3 4 5 6

中文翻译

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与DMN30H4D0L_15相关器件

型号	品牌	获取价格	描述	数据表
DMN30H4D0L-13	DIODES	获取价格	Low Gate Threshold Voltage
DMN30H4D0L-7	DIODES	获取价格	Low Gate Threshold Voltage
DMN30H4D0LFDE	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN30H4D0LFDE-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN30H4D0LFDE-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3110S	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET Fast Switching Speed
DMN3110S	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3110S-7	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET Fast Switching Speed
DMN3112S	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3112S	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET Low Input Capacitance

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