5秒后页面跳转
DMN3071LFR4 PDF预览

DMN3071LFR4

更新时间: 2024-11-06 14:54:39
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
9页 566K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

DMN3071LFR4 数据手册

 浏览型号DMN3071LFR4的Datasheet PDF文件第2页浏览型号DMN3071LFR4的Datasheet PDF文件第3页浏览型号DMN3071LFR4的Datasheet PDF文件第4页浏览型号DMN3071LFR4的Datasheet PDF文件第5页浏览型号DMN3071LFR4的Datasheet PDF文件第6页浏览型号DMN3071LFR4的Datasheet PDF文件第7页 
DMN3071LFR4  
N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features and Benefits  
Low On-Resistance  
ID  
BVDSS  
RDS(ON)  
Low Input/Output Leakage  
TA = +25°C  
Fast Switching Speed  
65mΩ @ VGS = 10V  
75mΩ @ VGS = 4.5V  
3.4A  
3.0A  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
30V  
Mechanical Data  
Description and Applications  
Case: X2-DFN1010-3  
This new generation MOSFET is designed to minimize the on-state  
resistance (RDS(ON) and yet maintain superior switching  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections: See Diagram  
)
performance, making it ideal for high efficiency power management  
applications.  
Terminals: Finish  
NiPdAu over Copper Leadframe;  
Power Management Functions  
Backlighting  
e4  
Solderable per MIL-STD-202, Method 208  
Weight: 0.0015 Grams (Approximate)  
Load Switch  
D
S
X2-DFN1010-3  
G
D
G
S
Bottom View  
Equivalent Circuit  
Pin-out Top View  
Ordering Information (Note 4)  
Part Number  
DMN3071LFR4-7  
DMN3071LFR4-7R  
Case  
Tape Width (mm)  
Tape Pitch (mm)  
Packaging  
X2-DFN1010-3  
X2-DFN1010-3  
8
8
4
4
3000/Tape & Reel  
3000/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and  
Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.  
1 of 9  
www.diodes.com  
January 2019  
© Diodes Incorporated  
DMN3071LFR4  
Document number: DS40749 Rev. 2 - 2  

与DMN3071LFR4相关器件

型号 品牌 获取价格 描述 数据表
DMN30H14DLY DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN30H14DLY-13 DIODES

获取价格

Small Signal Field-Effect Transistor, 0.21A I(D), 300V, 1-Element, N-Channel, Silicon, Met
DMN30H4D0L DIODES

获取价格

Low Gate Threshold Voltage
DMN30H4D0L_15 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN30H4D0L-13 DIODES

获取价格

Low Gate Threshold Voltage
DMN30H4D0L-7 DIODES

获取价格

Low Gate Threshold Voltage
DMN30H4D0LFDE DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN30H4D0LFDE-13 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN30H4D0LFDE-7 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3110S TYSEMI

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET Fast Switching Speed