Datasheet > DMN30H4D0LFDE

DMN30H4D0LFDE

更新时间： 2024-02-09 21:56:26

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	396K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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DMN30H4D0LFDE 数据手册

DMN30H4D0LFDE

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features

I_D

T_A= +25°C

0.55A

•

0.6mm profile – ideal for low profile applications

PCB footprint of 4mm²

V_(BR)DSS

R_DS(ON)

4Ω @ V_GS= 10V

4Ω @ V_GS= 4.5V

6Ω @ V_GS= 2.7V

Low Gate Threshold Voltage

300V

0.55A

Low Input Capacitance

0.44A

Fast Switching Speed

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R_DS(ON)and yet maintain superior switching

)

Mechanical Data

performance, making it ideal for high efficiency power management

applications.

•

Case: U-DFN2020-6

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208 e4

Applications

•

Power management functions

Battery Operated Systems and Solid-State Relays

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

•

Weight: 0.0065 grams (approximate)

U-DFN2020-6

Pin Out

Bottom View

Equivalent Circuit

Bottom View

Ordering Information (Note 4)

Part Number

DMN30H4D0LFDE-7

DMN30H4D0LFDE-13

Compliance

Standard

Case

U-DFN2020-6

Quantity per reel

3,000

10,000

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

2H = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Date Code Key

Year

2013

2014

2015

2016

2017

2018

2019

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

May 2014

DMN30H4D0LFDE

Document number: DS36380 Rev. 4 - 2

12 3 4 5 6

中文翻译

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与DMN30H4D0LFDE相关器件

型号	品牌	获取价格	描述	数据表
DMN30H4D0LFDE-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN30H4D0LFDE-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3110S	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET Fast Switching Speed
DMN3110S	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3110S-7	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET Fast Switching Speed
DMN3112S	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3112S	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET Low Input Capacitance
DMN3112S-7	TYSEMI	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET Low Input Capacitance
DMN3112S-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3112SQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET

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