Datasheet > DMN3067LW_15

DMN3067LW_15

更新时间： 2024-11-06 01:13:27

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	258K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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DMN3067LW_15 数据手册

DMN3067LW

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

Product Summary



Low On-Resistance

I_D

V_(BR)DSS

R_DS(ON)

Low Gate Threshold Voltage

T_A= +25°C

Low Input Capacitance

2.6A

2.5A

2.2A

67mΩ @ V_GS= 4.5V

70mΩ @ V_GS= 4.0V

98mΩ @ V_GS= 2.5V

Fast Switching Speed

30V

Small Surface Mount Package

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R_DS(ON)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Mechanical Data



Case: SOT323

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0



Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Applications



Switching

Power Management Functions



Weight: 0.006 grams (approximate)

SOT323

ESD PROTECTED

Top View

Pin Configuration

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMN3067LW-7

DMN3067LW-13

Case

SOT323

Packaging

3000/Tape & Reel

10000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

N30 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

M = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Chengdu A/T Site

Shanghai A/T Site

2012 2013

Date Code Key

Year

2011

2014

2015

2016

2017

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

March 2014

DMN3067LW

Document number: DS36640 Rev. 4 - 2

12 3 4 5 6

中文翻译

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与DMN3067LW_15相关器件

型号	品牌	获取价格	描述	数据表
DMN3067LW-13	DIODES	获取价格	Low On-Resistance
DMN3067LW-7	DIODES	获取价格	Low On-Resistance
DMN3069L	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3070SSN	DIODES	获取价格	Low On-Resistance
DMN3070SSN_15	DIODES	获取价格	30V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3070SSN-7	DIODES	获取价格	Low On-Resistance
DMN3071LFR4	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN30H14DLY	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN30H14DLY-13	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.21A I(D), 300V, 1-Element, N-Channel, Silicon, Met
DMN30H4D0L	DIODES	获取价格	Low Gate Threshold Voltage

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