Datasheet > DMN16M9UCA6

DMN16M9UCA6

更新时间： 2023-12-06 20:11:17

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	480K
描述
12V N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

获取价格

数据手册

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DMN16M9UCA6 数据手册

DMN16M9UCA6

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.009

0.008

0.007

0.006

0.005

0.004

0.003

I_S= 1mA

V_GS= 2.5V, I_S= 3A

I_S= 250μA

V_GS= 4.5V, I_S= 3A

V_GS= 3.8V, I_S= 3A

-50

-25

100 125 150

-50

-25

100 125 150

T_J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Junction

Temperature

Figure 8. Gate Threshold Variation vs. Junction

Temperature

10000

1000

100

f=1MHz

V_GS= 0V

C_iss

C_oss

T_J= 85^oC

T_J= 125^oC

C_rss

T_J= 25^oC

T_J= 150^oC

T_J= -55^oC

0.2

0.4

0.6

0.8

V_SS, SOURCE-SOURCE VOLTAGE(V)

Figure 10. Typical Junction Capacitance

V_SS, SOURCE-SOURCE VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

1000

100

R_DS(ON)Limited

P_W=100µs

V_SS= 6V, I_D= 18A

P_W=1ms

P_W=10ms

P_W=100ms

P_W=1s

T_J(Max)= 150℃ T_C= 25℃

Single Pulse

DUT on 1*MRP Board

V_GS= 10V

0.1

0.01

P_W=10s

Qg (nC)

0.01

0.1

100

V_SS, SOURCE-SOURCE VOLTAGE (V)

Figure 11. Gate Charge

Figure 12. SOA, Safe Operation Area

4 of 7

www.diodes.com

July 2017

DMN16M9UCA6

Document number: DS39737 Rev. 2 - 2

1 2 345 6 7

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