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DDB6U134N16RR PDF预览

DDB6U134N16RR

更新时间: 2024-11-06 12:52:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
13页 163K
描述
Diode Module with Chopper-IGBT

DDB6U134N16RR 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X19针数:19
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.16Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):70 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
JESD-30 代码:R-XUFM-X19元件数量:1
端子数量:19最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
Base Number Matches:1

DDB6U134N16RR 数据手册

 浏览型号DDB6U134N16RR的Datasheet PDF文件第2页浏览型号DDB6U134N16RR的Datasheet PDF文件第3页浏览型号DDB6U134N16RR的Datasheet PDF文件第4页浏览型号DDB6U134N16RR的Datasheet PDF文件第5页浏览型号DDB6U134N16RR的Datasheet PDF文件第6页浏览型号DDB6U134N16RR的Datasheet PDF文件第7页 
Technische Information / Technical Information  
Dioden-Modul mit Chopper-IGBT  
DD B6U 134 N 16 RR  
N
B6  
Diode Module with Chopper-IGBT  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
Gleichrichterdiode / Rectifierdiode  
Tvj = - 40°C...Tvj max  
Periodische Spitzensperrspannung  
repetitive peak reverse voltage  
VRRM  
1600  
80  
V
A
A
Durchlaßstrom-Grenzeffektivwert (pro Element)  
RMS forward current (per chip)  
IFRMSM  
TC = 100°C  
Ausgangsstrom  
output current  
Id  
134  
Tvj = 25°C, tp = 10ms  
Tvj = Tvj max, tp = 10ms  
Stoßstrom-Grenzwert  
surge forward current  
IFSM  
650  
550  
A
A
Tvj = 25°C, tp = 10ms  
Tvj = Tvj max, tp = 10ms  
Grenzlastintegral  
I²t-value  
I²t  
2100  
1500  
A²s  
A²s  
IGBT  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
VCES  
1200  
70  
V
A
A
W
V
TC = 80°C  
Kollektor-Dauergleichstrom  
DC-collector current  
IC  
tp = 1ms, TC = 80°C  
TC = 25°C  
Periodischer Kollektor-Spitzenstrom  
repetitive peak collektor current  
ICRM  
Ptot  
VGE  
150  
500  
± 20  
Gesamt-Verlustleistung  
total power dissipation  
Gate-Emitter Spitzenspannung  
gate-emitter peak voltage  
Schnelle Diode / Fast diode  
Periodische Spitzensperrspannung  
repetitive peak reverse voltage  
VRRM  
1200  
35  
V
A
A
TC = 80°C  
tp = 1ms  
Dauergleichstrom  
DC forward current  
IF  
Periodischer Spitzenstrom  
IFRM  
70  
repetitive peak forward current  
Modul  
RMS, f = 50Hz, t = 1min  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
2,5  
kV  
NTC connected to baseplate  
Charakteristische Werte / Characteristic values  
Gleichrichterdiode / Rectifierdiode  
min. typ. max.  
1,35  
Tvj = Tvj max, iF = 100A  
Durchlaßspannung  
forward voltage  
vF  
V
V
Tvj = Tvj max  
Schleusenspannung  
threshold voltage  
V(TO)  
0,75  
6,3  
5
Tvj = Tvj max  
Ersatzwiderstand  
rT  
mW  
mA  
forward slope resistance  
Tvj = Tvj max, vR = VRRM  
Sperrstrom  
iR  
reverse current  
TC = 25°C  
Modul Leitungswiderstand, Anschlüsse-Chip  
lead resistance, terminals-chip  
RAA`+KK`  
1
mW  
prepared by: Ralf Jörke  
date of publication: 13.12.2000  
revision: 1  
approved by: Lothar Kleber  
BIP AM; R. Jörke  
19. Dez 00  
A 34/00  
Seite/page 1(12)  

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