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DDB6U30N08VR PDF预览

DDB6U30N08VR

更新时间: 2024-11-06 10:01:31
品牌 Logo 应用领域
EUPEC 晶体晶体管双极性晶体管局域网
页数 文件大小 规格书
8页 243K
描述
IGBT-modules

DDB6U30N08VR 技术参数

生命周期:Transferred包装说明:MODULE-9
Reach Compliance Code:unknown风险等级:5.65
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):26 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTORJESD-30 代码:R-XUFM-X9
元件数量:1端子数量:9
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管元件材料:SILICON标称断开时间 (toff):145 ns
标称接通时间 (ton):38 nsBase Number Matches:1

DDB6U30N08VR 数据手册

 浏览型号DDB6U30N08VR的Datasheet PDF文件第2页浏览型号DDB6U30N08VR的Datasheet PDF文件第3页浏览型号DDB6U30N08VR的Datasheet PDF文件第4页浏览型号DDB6U30N08VR的Datasheet PDF文件第5页浏览型号DDB6U30N08VR的Datasheet PDF文件第6页浏览型号DDB6U30N08VR的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
DDB6U30N08VR  
Diode-Gleichrichter / diode-rectifier  
Vorläufige Daten / preliminary data  
chstzulässige Werte / maximum rated values  
Periodische Rückw. Spitzensperrspannung  
repetitive peak reverse voltage  
TÝÎ = 25°C  
Vçç¢  
IŒç¢»¢  
I碻¢  
IŒ»¢  
800  
30  
V
A
A
Durchlassstrom Grenzeffektivwert pro Dio.  
T† = 80°C  
forward current RMS maximum per diode  
Gleichrichter Ausgang Grenzeffektivstrom  
T† = 80°C  
30  
maximum RMS current at Rectifier output  
Stoßstrom Grenzwert  
surge forward current  
tÔ = 10 ms, TÝÎ = 25°C  
tÔ = 10 ms, TÝÎ = 150°C  
310  
250  
A
A
Grenzlastintegral  
I²t - value  
tÔ = 10 ms, TÝÎ = 25°C  
tÔ = 10 ms, TÝÎ = 150°C  
480  
315  
A²s  
A²s  
I²t  
Charakteristische Werte / characteristic values  
Durchlassspannung  
TÝÎ = 150°C, IŒ = 30 A  
forward voltage  
min. typ. max.  
1,10  
VŒ  
VÅ¥  
rÅ  
V
V
Schleusenspannung  
TÝÎ = 150°C  
0,85  
8,30  
0,10  
threshold voltage  
Ersatzwiderstand  
TÝÎ = 150°C  
m  
mA  
slope resistance  
Sperrstrom  
TÝÎ = 150°C, Vç = 800 V  
reverse current  
Iç  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro Diode  
per diode  
RÚÌœ†  
RÚ̆™  
1,60 1,80 K/W  
0,65 K/W  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro Diode / per diode  
/
ð«ÈÙÚþ = 1 W/(m·K)  
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Peter Kanschat  
approved by: Ingo Graf  
date of publication: 2004-8-3  
revision: 2.0  
1

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