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DDB6U145N18L PDF预览

DDB6U145N18L

更新时间: 2024-11-21 10:57:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 91K
描述
Rectifier Diode,

DDB6U145N18L 数据手册

 浏览型号DDB6U145N18L的Datasheet PDF文件第2页浏览型号DDB6U145N18L的Datasheet PDF文件第3页浏览型号DDB6U145N18L的Datasheet PDF文件第4页浏览型号DDB6U145N18L的Datasheet PDF文件第5页浏览型号DDB6U145N18L的Datasheet PDF文件第6页浏览型号DDB6U145N18L的Datasheet PDF文件第7页 
Technische Information / Technical Information  
Netz-Dioden-Modul  
Rectifier Diode Module  
DD B6U 145 N 12...18 (ISOPACK)  
N
B6  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
Tvj = - 40°C...Tvj max  
VRRM  
VRSM  
IFRMSM  
Id  
Periodische Spitzensperrspannung  
1200, 1400  
1600, 1800  
V
V
repetitive peak reverse voltage  
Tvj = + 25°C...T  
Stoßspitzensperrspannung  
1300, 1500  
1700, 1900  
V
V
vj max  
non-repetitive peak reverse voltage  
Durchlaßstrom-Grenzeffektivwert (pro Element)  
RMS forward current (per chip)  
100  
A
TC = 100°C  
Ausgangsstrom  
145  
173  
71  
A
A
A
A
A
A
TC = 84°C  
output current  
TA = 45°C, KM 11  
TA = 45°C, KM 33  
97  
TA = 35°C, KM 14 (V = 45l/s)  
153  
173  
L
TA = 35°C, KM 33 (V = 90l/s)  
L
Tvj = 25°C, t = 10ms  
IFSM  
Stoßstrom-Grenzwert  
1200  
1000  
A
A
Tvj = Tvj max, tp = 10ms  
surge forward current  
Tvj = 25°C, t = 10ms  
Grenzlastintegral  
I²t  
7200  
5000  
A²s  
A²s  
Tvj = Tvj max, tp = 10ms  
I²t-value  
Charakteristische Werte / Characteristic values  
Tvj = Tvj max, iF = 150A  
vF  
Durchlaßspannung  
forward voltage  
max. 1,43  
0,75  
V
Tvj = Tvj max  
V(TO)  
Schleusenspannung  
threshold voltage  
V
Tvj = Tvj max  
rT  
Ersatzwiderstand  
3,1  
m  
mA  
forward slope resistance  
Tvj = Tvj max,vR = VRRM  
iR  
Sperrstrom  
max.  
5
reverse current  
RMS, f = 50Hz, t = 1min  
RMS, f = 50Hz, t = 1sec  
VISOL  
Isolations-Prüfspannung  
insulation test voltage  
3,0  
3,6  
kV  
kV  
Thermische Eigenschaften / Thermal properties  
pro Modul / per module, Θ = 120°rect  
pro Element / per chip, Θ = 120°rect  
pro Modul / per module, DC  
RthJC  
Innerer Wärmewiderstand  
max. 0,148  
max. 0,890  
max. 0,167  
max. 0,700  
°C/W  
°C/W  
°C/W  
°C/W  
thermal resistance, junction to case  
pro Element / per chip, DC  
pro Modul / per module  
pro Element / per chip  
RthCK  
Tvj max  
Tc op  
Tstg  
Übergangs-Wärmewiderstand  
max. 0,033  
max. 0,200  
°C/W  
°C/W  
thermal resistance, case to heatsink  
Höchstzulässige Sperrschichttemperatur  
max. junction temperature  
150  
- 40...+150  
- 40...+150  
°C  
°C  
°C  
Betriebstemperatur  
operating temperature  
Lagertemperatur  
storage temperature  
MOD-E1; R. Jörke  
09. Feb 99  
A /99  
Seite/page 1(6)  

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