CY7C1069BV33
16-Mbit (2M x 8) Static RAM
Features
Functional Description
• High speed
The CY7C1069BV33 is a high-performance CMOS Static
RAM organized as 2,097,152 words by 8 bits. Writing to the
device is accomplished by enabling the chip (by taking CE
LOW) and Write Enable (WE) inputs LOW.
— tAA = 10 ns
• Low active power
— 990 mW (max.)
Reading from the device is accomplished by enabling the chip
(CE LOW) as well as forcing the Output Enable (OE) LOW
while forcing the Write Enable (WE) HIGH. See the truth table
at the back of this data sheet for a complete description of
Read and Write modes.
• Operating voltages of 3.3 ± 0.3V
• 2.0V data retention
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
The input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a Write
operation (CE LOW and WE LOW).
• Available in Pb-free and non Pb-free 54-pin TSOP II
package
The CY7C1069BV33 is available in a 54-pin TSOP II package
with center power and ground (revolutionary) pinout.
Pin Configurations[1, 2]
Logic Block Diagram
54-pin TSOP II (Top View)
INPUT BUFFER
NC
1
54
53
NC
CC
V
V
2
3
4
5
6
SS
A
A
A
0
1
2
NC
52
51
50
NC
I/O
I/O
6
5
V
A
V
SS
3
4
CC
I/O –I/O
2M x 8
0
7
A
I/O
49 I/O
7
4
ARRAY
A
A
5
6
48
47
A
5
A
6
A
A
3
7
4
8
A
A
A
7
8
9
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
A
A
7
9
2
A
10
11
12
13
A
8
1
A
A
9
0
NC
NC
CE
CC
WE
OE
COLUMN
DECODER
V
V
SS
14
15
16
17
18
19
20
21
22
23
OE
CE
DNU/V
WE
CC
SS
A
20
DNU/V
A
19
A
10
A
18
A
11
A
17
A
13
12
A
A
15
16
A
A
14
I/O
V
I/O
V
0
3
CC
SS
24
25
26
27
I/O
I/O
2
1
NC
NC
V
V
CC
SS
NC
NC
Notes:
1. DNU/V Pin (#16) has to be left floating or connected to V and DNU/V Pin (#40) has to be left floating or connected to V to ensure proper application.
CC
CC
SS
SS
2. NC - No Connect Pins are not connected to the die.
Cypress Semiconductor Corporation
Document #: 38-05694 Rev. *B
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised August 3, 2006