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CY7C1069DV33_07 PDF预览

CY7C1069DV33_07

更新时间: 2024-11-09 05:09:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
10页 515K
描述
16-Mbit (2M x 8) Static RAM

CY7C1069DV33_07 数据手册

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CY7C1069DV33  
16-Mbit (2M x 8) Static RAM  
Features  
Functional Description  
High speed  
tAA = 10 ns  
The CY7C1069DV33 is a high performance CMOS Static RAM  
organized as 2,097,152 words by 8 bits.  
To write to the device, take Chip Enables (CE1 LOW and CE2  
HIGH) and Write Enable (WE) input LOW. Data on the eight IO  
pins (IO0 through IO7) is then written into the location specified  
on the address pins (A0 through A20).  
Low active power  
ICC = 175 mA at 10 ns  
Low CMOS standby power  
ISB2 = 25 mA  
To read from the device, take Chip Enables (CE1 LOW and CE2  
HIGH) and Output Enable (OE) LOW while forcing the Write  
Enable (WE) HIGH. Under these conditions, the contents of the  
memory location specified by the address pins will appear on the  
IO pins. See Truth Table on page 8 for a complete description of  
Read and Write modes.  
Operating voltages of 3.3 ± 0.3V  
2.0V data retention  
Automatic power down when deselected  
TTL compatible inputs and outputs  
Easy memory expansion with CE1 and CE2 features  
The input and output pins (IO0 through IO7) are placed in a high  
impedance state when the device is deselected (CE1 HIGH or  
CE2 LOW), the outputs are disabled (OE HIGH), or during a write  
operation (CE1 LOW, CE2 HIGH, and WE LOW).  
Available in Pb-free 54-Pin TSOP II and 48-Ball VFBGA  
packages  
The CY7C1069DV33 is available in a 54-pin TSOP II package  
with center power and ground (revolutionary) pinout, and a  
48-Ball very fine pitch ball grid array (VFBGA) package.  
Logic Block Diagram  
INPUT BUFFER  
A0  
A1  
A2  
A3  
IO0 – IO7  
2M x 8  
A4  
ARRAY  
A5  
A6  
A7  
A8  
A9  
WE  
CE2  
OE  
COLUMN  
DECODER  
CE1  
Cypress Semiconductor Corporation  
Document Number: 38-05478 Rev. *D  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised September 06, 2007  

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