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CY7C1061AV33-8BAC PDF预览

CY7C1061AV33-8BAC

更新时间： 2024-11-22 22:03:35
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
11页 273K
描述
1M x 16 Static RAM

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CY7C1061AV33-8BAC 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：8 X 20 MM, 1.20 MM HEIGHT, MINI, FBGA-48
针数：48Reach Compliance Code：compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.74最长访问时间：8 ns
I/O 类型：COMMONJESD-30 代码：R-PBGA-B48
JESD-609代码：e0长度：20 mm
内存密度：16777216 bit内存集成电路类型：STANDARD SRAM
内存宽度：16湿度敏感等级：3
功能数量：1端子数量：48
字数：1048576 words字数代码：1000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：1MX16
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装等效代码：BGA48,6X8,30
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：3.3 V认证状态：Not Qualified
座面最大高度：1.2 mm最大待机电流：0.05 A
最小待机电流：3 V子类别：SRAMs
最大压摆率：0.3 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：TIN LEAD
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：8 mmBase Number Matches：1

CY7C1061AV33-8BAC 数据手册

 浏览型号CY7C1061AV33-8BAC的Datasheet PDF文件第2页浏览型号CY7C1061AV33-8BAC的Datasheet PDF文件第3页浏览型号CY7C1061AV33-8BAC的Datasheet PDF文件第4页浏览型号CY7C1061AV33-8BAC的Datasheet PDF文件第5页浏览型号CY7C1061AV33-8BAC的Datasheet PDF文件第6页浏览型号CY7C1061AV33-8BAC的Datasheet PDF文件第7页 
CY7C1061AV33  
1M x 16 Static RAM  
specified on the address pins (A0 through A19). If Byte High  
Enable (BHE) is LOW, then data from I/O pins (I/O8 through  
I/O15) is written into the location specified on the address pins  
(A0 through A19).  
Features  
• High speed  
— tAA = 8, 10, 12 ns  
Reading from the device is accomplished by enabling the chip  
by taking CE1 LOW and CE2 HIGH while forcing the Output  
Enable (OE) LOW and the Write Enable (WE) HIGH. If Byte  
Low Enable (BLE) is LOW, then data from the memory location  
specified by the address pins will appear on I/O0 to I/O7. If Byte  
High Enable (BHE) is LOW, then data from memory will appear  
on I/O8 to I/O15. See the truth table at the back of this data  
sheet for a complete description of Read and Write modes.  
• Low active power  
— 1080 mW (max.)  
• Operating voltages of 3.3 ± 0.3V  
• 2.0V data retention  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE1 and CE2 features  
The input/output pins (I/O0 through I/O15) are placed in a  
high-impedance state when the device is deselected (CE1  
HIGH/CE2 LOW), the outputs are disabled (OE HIGH), the  
BHE and BLE are disabled (BHE, BLE HIGH), or during a  
Write operation (CE1 LOW, CE2 HIGH, and WE LOW).  
Functional Description  
The CY7C1061AV33 is a high-performance CMOS Static  
RAM organized as 1,048,576 words by 16 bits.  
Writing to the device is accomplished by enabling the chip  
(CE1 LOW and CE2 HIGH) while forcing the Write Enable  
(WE) input LOW. If Byte Low Enable (BLE) is LOW, then data  
from I/O pins (I/O0 through I/O7), is written into the location  
The CY7C1061AV33 is available in a 54-pin TSOP II package  
with center power and ground (revolutionary) pinout, and a  
48-ball fine-pitch ball grid array (FBGA) package.  
Pin Configuration  
Logic Block Diagram  
TSOP II (Top View)  
1
54 I/O  
11  
INPUT BUFFER  
I/O  
V
12  
CC  
53  
52  
51  
50  
V
I/O  
I/O  
2
3
4
5
6
SS  
I/O  
13  
14  
10  
A
0
A
1
I/O  
V
9
V
CC  
SS  
A
2
I/O  
49 I/O  
15  
8
A
3
4
I/O –I/O  
1M x 16  
ARRAY  
0
7
A
A
3
A
A
1
A
48  
47  
A
5
A
6
7
A
4
8
A
5
6
4096 x 4096  
I/O –I/O  
8
15  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
A
7
A
9
2
A
10  
11  
12  
13  
A
8
7
A
A
9
8
A
0
NC  
9
BHE  
CE  
OE  
1
V
V
CC  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
SS  
WE  
DNU (Do Not Use)  
BLE  
COLUMN  
DECODER  
CE  
2
A
19  
A
10  
A
18  
A
11  
A
12  
A
13  
A
A
A
17  
16  
15  
BHE  
WE  
A
14  
I/O  
V
I/O  
V
0
7
CE  
2
1
CC  
SS  
CE  
24  
25  
26  
27  
I/O  
I/O  
OE  
BLE  
6
5
1
2
I/O  
I/O  
V
V
SS  
CC  
I/O  
I/O  
3
4
Selection Guide  
-8  
8
-10  
10  
-12  
12  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
Commercial  
Industrial  
300  
300  
50  
275  
275  
50  
260  
260  
50  
mA  
Maximum CMOS Standby Current  
Commercial/Industrial  
mA  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose  
•
CA 95134  
•
408-943-2600  
Document #: 38-05256 Rev. *D  
Revised February 21, 2003  
1234567...11

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