CY7C1061DV33
PRELIMINARY
16-Mbit (1M x 16) Static RAM
Features
Functional Description
• High speed
The CY7C1061DV33 is a high-performance CMOS Static
RAM organized as 1,048,576 words by 16 bits.
— tAA = 10 ns
Writing to the device is accomplished by enabling the chip
(CE1 LOW and CE2 HIGH) while forcing the Write Enable
(WE) input LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O0 through I/O7), is written into the location
specified on the address pins (A0 through A19). If Byte High
Enable (BHE) is LOW, then data from I/O pins (I/O8 through
I/O15) is written into the location specified on the address pins
(A0 through A19).
• Low active power
— ICC = 125 mA @ 10 ns
• Low CMOS standby power
— ISB2 = 25 mA
• Operating voltages of 3.3 ± 0.3V
• 2.0V data retention
Reading from the device is accomplished by enabling the chip
by taking CE1 LOW and CE2 HIGH while forcing the Output
Enable (OE) LOW and the Write Enable (WE) HIGH. If Byte
Low Enable (BLE) is LOW, then data from the memory location
specified by the address pins will appear on I/O0 to I/O7. If Byte
High Enable (BHE) is LOW, then data from memory will appear
on I/O8 to I/O15. See the truth table at the back of this data
sheet for a complete description of Read and Write modes.
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE1 and CE2 features
• Available in Pb-free 54-pin TSOP II package and 48-ball
VFBGA packages
The input/output pins (I/O0 through I/O15) are placed in a
high-impedance state when the device is deselected (CE1
HIGH/CE2 LOW), the outputs are disabled (OE HIGH), the
BHE and BLE are disabled (BHE, BLE HIGH), or during a
Write operation (CE1 LOW, CE2 HIGH, and WE LOW).
The CY7C1061DV33 is available in a 54-pin TSOP II package
with center power and ground (revolutionary) pinout, and a
48-ball Very fine-pitch ball grid array (VFBGA) package
Logic Block Diagram
Pin Configuration
54-pin TSOP II (Top View)
I/O
V
I/O
I/O
1
54
53
I/O
V
11
12
CC
INPUT BUFFER
2
3
4
5
6
SS
I/O
52
51
50
13
14
10
A
0
I/O
V
9
A
1
V
SS
CC
A
2
I/O
49 I/O
15
8
A
4
3
A
A
3
48
47
A
5
I/O0–I/O7
7
1M x 16
ARRAY
4
A
A
8
6
A
5
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
A
A
7
9
I/O8–I/O15
2
A
6
A
10
11
12
A
1
8
A
7
A
A
9
0
A
8
NC
BHE
CE1 13
CC
14
A
9
OE
V
V
SS
WE
NC
15
COLUMN
DECODER
CE2
BLE
16
A
19
A
17
18
19
20
21
22
23
24
25
26
27
10
A
18
A
11
A
A
13
17
12
A
A
16
A
A
14
15
BHE
WE
I/O
I/O
0
7
CE2
CE1
V
V
CC
SS
I/O
I/O
6
5
1
2
OE
BLE
I/O
V
I/O
V
SS
CC
28 I/O
I/O
3
4
Cypress Semiconductor Corporation
Document #: 38-05476 Rev. *C
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised September 14, 2006
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