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CY7C1061DV33-10BV1XIT PDF预览

CY7C1061DV33-10BV1XIT

更新时间: 2024-11-09 14:33:11
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
19页 1632K
描述
Standard SRAM, 1MX16, 10ns, CMOS, PBGA48, 8 X 9.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48

CY7C1061DV33-10BV1XIT 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:VFBGA, BGA48,6X8,30
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.82
Is Samacsys:N最长访问时间:10 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
JESD-609代码:e1长度:9.5 mm
内存密度:16777216 bit内存集成电路类型:STANDARD SRAM
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1 mm最大待机电流:0.025 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.175 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:20
宽度:8 mmBase Number Matches:1

CY7C1061DV33-10BV1XIT 数据手册

 浏览型号CY7C1061DV33-10BV1XIT的Datasheet PDF文件第2页浏览型号CY7C1061DV33-10BV1XIT的Datasheet PDF文件第3页浏览型号CY7C1061DV33-10BV1XIT的Datasheet PDF文件第4页浏览型号CY7C1061DV33-10BV1XIT的Datasheet PDF文件第5页浏览型号CY7C1061DV33-10BV1XIT的Datasheet PDF文件第6页浏览型号CY7C1061DV33-10BV1XIT的Datasheet PDF文件第7页 
CY7C1061DV33  
16-Mbit (1M × 16) Static RAM  
16-Mbit (1M  
× 16) Static RAM  
Features  
Functional Description  
High speed  
tAA = 10 ns  
The CY7C1061DV33 is a high performance CMOS Static RAM  
organized as 1,048,576 words by 16 bits.  
To write to the device, take Chip Enables (CE1 LOW and CE2  
HIGH) and Write Enable (WE) input LOW. If Byte Low Enable  
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is  
written into the location specified on the address pins (A0 through  
Low active power  
ICC = 175 mA at 100 MHz  
Low CMOS standby power  
ISB2 = 25 mA  
A
19). If Byte High Enable (BHE) is LOW, then data from I/O pins  
(I/O8 through I/O15) is written into the location specified on the  
address pins (A0 through A19).  
Operating voltages of 3.3 ± 0.3 V  
2.0 V data retention  
To read from the device, take Chip Enables (CE1 LOW and CE2  
HIGH) and Output Enable (OE) LOW while forcing the Write  
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data  
from the memory location specified by the address pins appears  
on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from  
memory appears on I/O8 to I/O15. See Truth Table on page 12  
for a complete description of Read and Write modes.  
Automatic power down when deselected  
TTL compatible inputs and outputs  
Easy memory expansion with CE1 and CE2 features  
Available in Pb-free 54-pin TSOP II and 48-ball VFBGA  
packages  
The input or output pins (I/O0 through I/O15) are placed in a high  
impedance state when the device is deselected (CE1 HIGH/CE2  
LOW), the outputs are disabled (OE HIGH), the BHE and BLE  
are disabled (BHE, BLE HIGH), or during a write operation (CE1  
LOW, CE2 HIGH, and WE LOW).  
Offered in single CE and dual CE options  
The CY7C1061DV33 is available in a 54-pin TSOP II package  
with center power and ground (revolutionary) pinout, and 48-ball  
VFBGA packages.  
For a complete list of related documentation, click here.  
Logic Block Diagram  
INPUT BUFFER  
A
0
A
1
A
2
A
4
3
I/O0 – I/O7  
I/O8 – I/O15  
1M x 16  
ARRAY  
A
A
5
A
6
A
7
A
8
A
9
COLUMN  
DECODER  
BHE  
WE  
CE2  
CE1  
OE  
BLE  
Cypress Semiconductor Corporation  
Document Number: 38-05476 Rev. *K  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised November 22, 2016  
 
 

CY7C1061DV33-10BV1XIT 替代型号

型号 品牌 替代类型 描述 数据表
CY7C1061DV33-10BV1XI CYPRESS

完全替代

Standard SRAM, 1MX16, 10ns, CMOS, PBGA48, 8 X 9.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
CY7C1061DV33-10BVJXI CYPRESS

完全替代

Standard SRAM, 1MX16, 10ns, CMOS, PBGA48, 8 X 9.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
CY7C1061DV33-10BVXI CYPRESS

完全替代

16-Mbit (1M x 16) Static RAM

与CY7C1061DV33-10BV1XIT相关器件

型号 品牌 获取价格 描述 数据表
CY7C1061DV33-10BVJXI CYPRESS

获取价格

Standard SRAM, 1MX16, 10ns, CMOS, PBGA48, 8 X 9.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
CY7C1061DV33-10BVJXIT CYPRESS

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Standard SRAM, 1MX16, 10ns, CMOS, PBGA48, 8 X 9.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
CY7C1061DV33-10BVXI CYPRESS

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16-Mbit (1M x 16) Static RAM
CY7C1061DV33-10ZSXI CYPRESS

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16-Mbit (1M x 16) Static RAM
CY7C1061DV33-10ZXI CYPRESS

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16-Mbit (1M x 16) Static RAM
CY7C1061G CYPRESS

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16-Mbit (1 M words × 16 bit) Static RAM with
CY7C1061G-10BV1XI INFINEON

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Asynchronous SRAM
CY7C1061G-10BV1XIT INFINEON

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Asynchronous SRAM
CY7C1061G-10BVJXI INFINEON

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Asynchronous SRAM
CY7C1061G-10BVJXIT INFINEON

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Asynchronous SRAM