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CY7C1061DV33-10BVJXI PDF预览

CY7C1061DV33-10BVJXI

更新时间： 2024-11-09 13:07:11
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器
页数 文件大小 规格书
10页 407K
描述
Standard SRAM, 1MX16, 10ns, CMOS, PBGA48, 8 X 9.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48

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CY7C1061DV33-10BVJXI 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：BGA
包装说明：VFBGA, BGA48,6X8,30针数：48
Reach Compliance Code：compliantECCN代码：3A991.B.2.B
HTS代码：8542.32.00.41风险等级：8.6
Is Samacsys：N最长访问时间：10 ns
I/O 类型：COMMONJESD-30 代码：R-PBGA-B48
JESD-609代码：e1长度：9.5 mm
内存密度：16777216 bit内存集成电路类型：STANDARD SRAM
内存宽度：16湿度敏感等级：3
功能数量：1端口数量：1
端子数量：48字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：1MX16输出特性：3-STATE
可输出：YES封装主体材料：PLASTIC/EPOXY
封装代码：VFBGA封装等效代码：BGA48,6X8,30
封装形状：RECTANGULAR封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
认证状态：Not Qualified反向引出线：NO
座面最大高度：1 mm最大待机电流：0.025 A
最小待机电流：2 V最大压摆率：0.175 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：40宽度：8 mm
Base Number Matches：1

CY7C1061DV33-10BVJXI 数据手册

 浏览型号CY7C1061DV33-10BVJXI的Datasheet PDF文件第2页浏览型号CY7C1061DV33-10BVJXI的Datasheet PDF文件第3页浏览型号CY7C1061DV33-10BVJXI的Datasheet PDF文件第4页浏览型号CY7C1061DV33-10BVJXI的Datasheet PDF文件第5页浏览型号CY7C1061DV33-10BVJXI的Datasheet PDF文件第6页浏览型号CY7C1061DV33-10BVJXI的Datasheet PDF文件第7页 
CY7C1061DV33  
PRELIMINARY  
16-Mbit (1M x 16) Static RAM  
Features  
Functional Description  
• High speed  
The CY7C1061DV33 is a high-performance CMOS Static  
RAM organized as 1,048,576 words by 16 bits.  
— tAA = 10 ns  
Writing to the device is accomplished by enabling the chip  
(CE1 LOW and CE2 HIGH) while forcing the Write Enable  
(WE) input LOW. If Byte Low Enable (BLE) is LOW, then data  
from I/O pins (I/O0 through I/O7), is written into the location  
specified on the address pins (A0 through A19). If Byte High  
Enable (BHE) is LOW, then data from I/O pins (I/O8 through  
I/O15) is written into the location specified on the address pins  
(A0 through A19).  
• Low active power  
— ICC = 125 mA @ 10 ns  
• Low CMOS standby power  
— ISB2 = 25 mA  
• Operating voltages of 3.3 ± 0.3V  
• 2.0V data retention  
Reading from the device is accomplished by enabling the chip  
by taking CE1 LOW and CE2 HIGH while forcing the Output  
Enable (OE) LOW and the Write Enable (WE) HIGH. If Byte  
Low Enable (BLE) is LOW, then data from the memory location  
specified by the address pins will appear on I/O0 to I/O7. If Byte  
High Enable (BHE) is LOW, then data from memory will appear  
on I/O8 to I/O15. See the truth table at the back of this data  
sheet for a complete description of Read and Write modes.  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE1 and CE2 features  
• Available in Pb-free 54-pin TSOP II package and 48-ball  
VFBGA packages  
The input/output pins (I/O0 through I/O15) are placed in a  
high-impedance state when the device is deselected (CE1  
HIGH/CE2 LOW), the outputs are disabled (OE HIGH), the  
BHE and BLE are disabled (BHE, BLE HIGH), or during a  
Write operation (CE1 LOW, CE2 HIGH, and WE LOW).  
The CY7C1061DV33 is available in a 54-pin TSOP II package  
with center power and ground (revolutionary) pinout, and a  
48-ball Very fine-pitch ball grid array (VFBGA) package  
Logic Block Diagram  
Pin Configuration  
54-pin TSOP II (Top View)  
I/O  
V
I/O  
I/O  
1
54  
53  
I/O  
V
11  
12  
CC  
INPUT BUFFER  
2
3
4
5
6
SS  
I/O  
52  
51  
50  
13  
14  
10  
A
0
I/O  
V
9
A
1
V
SS  
CC  
A
2
I/O  
49 I/O  
15  
8
A
4
3
A
A
3
48  
47  
A
5
I/O0–I/O7  
7
1M x 16  
ARRAY  
4
A
A
8
6
A
5
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
A
A
7
9
I/O8–I/O15  
2
A
6
A
10  
11  
12  
A
1
8
A
7
A
A
9
0
A
8
NC  
BHE  
CE1 13  
CC  
14  
A
9
OE  
V
V
SS  
WE  
NC  
15  
COLUMN  
DECODER  
CE2  
BLE  
16  
A
19  
A
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
10  
A
18  
A
11  
A
A
13  
17  
12  
A
A
16  
A
A
14  
15  
BHE  
WE  
I/O  
I/O  
0
7
CE2  
CE1  
V
V
CC  
SS  
I/O  
I/O  
6
5
1
2
OE  
BLE  
I/O  
V
I/O  
V
SS  
CC  
28 I/O  
I/O  
3
4
Cypress Semiconductor Corporation  
Document #: 38-05476 Rev. *C  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised September 14, 2006  
[+] Feedback  
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CY7C1061DV33-10BVJXI 替代型号

型号 品牌 替代类型 描述 数据表
CY7C1061DV33-10BV1XIT CYPRESS

完全替代

 Standard SRAM, 1MX16, 10ns, CMOS, PBGA48, 8 X 9.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
CY7C1061DV33-10BV1XI CYPRESS

完全替代

 Standard SRAM, 1MX16, 10ns, CMOS, PBGA48, 8 X 9.50 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
CY7C1061DV33-10BVXI CYPRESS

完全替代

 16-Mbit (1M x 16) Static RAM

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