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CY7C1061BV33-12ZXCT PDF预览

CY7C1061BV33-12ZXCT

更新时间： 2024-11-19 18:36:59
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 295K
描述
Standard SRAM, 1MX16, 12ns, CMOS, PDSO54, LEAD FREE, TSOP2-54

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CY7C1061BV33-12ZXCT 技术参数

生命周期：Obsolete零件包装代码：TSOP2
包装说明：TSOP2,针数：54
Reach Compliance Code：unknownECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.55
最长访问时间：12 nsJESD-30 代码：R-PDSO-G54
长度：22.415 mm内存密度：16777216 bit
内存集成电路类型：STANDARD SRAM内存宽度：16
功能数量：1端子数量：54
字数：1048576 words字数代码：1000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：1MX16
封装主体材料：PLASTIC/EPOXY封装代码：TSOP2
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：GULL WING
端子节距：0.8 mm端子位置：DUAL
宽度：10.16 mmBase Number Matches：1

CY7C1061BV33-12ZXCT 数据手册

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CY7C1061BV33  
16-Mbit (1M x 16) Static RAM  
Low Enable (BLE) is LOW, then data from I/O pins (I/O0  
through I/O7), is written into the location specified on the  
address pins (A0 through A19). If Byte High Enable (BHE) is  
LOW, then data from I/O pins (I/O8 through I/O15) is written into  
the location specified on the address pins (A0 through A19).  
Features  
• High speed  
— tAA = 10 ns  
• Low active power  
Reading from the device is accomplished by enabling the chip  
by taking CE LOW while forcing the Output Enable (OE) LOW  
and the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is  
LOW, then data from the memory location specified by the  
address pins will appear on I/O0 to I/O7. If Byte High Enable  
(BHE) is LOW, then data from memory will appear on I/O8 to  
I/O15. See the truth table at the back of this data sheet for a  
complete description of Read and Write modes.  
— 990 mW (max.)  
• Operating voltages of 3.3 ± 0.3V  
• 2.0V data retention  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Available in Pb-free and non Pb-free 54-pin TSOP II  
package  
The input/output pins (I/O0 through I/O15) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE  
are disabled (BHE, BLE HIGH), or during a Write operation  
(CE LOW and WE LOW).  
Functional Description  
The CY7C1061BV33 is a high-performance CMOS Static  
RAM organized as 1,048,576 words by 16 bits.  
The CY7C1061BV33 is available in a 54-pin TSOP II package  
with center power and ground (revolutionary) pinout.  
Writing to the device is accomplished by enabling the chip (CE  
LOW) while forcing the Write Enable (WE) input LOW. If Byte  
Logic Block Diagram  
Pin Configurations[1, 2]  
54-pin TSOP II (Top View)  
I/O  
V
I/O  
I/O  
1
54  
53  
I/O  
V
11  
12  
CC  
INPUT BUFFER  
2
3
4
5
6
SS  
I/O  
52  
51  
50  
13  
14  
10  
A
0
I/O  
V
9
A
1
V
SS  
A
CC  
2
I/O  
49 I/O  
A
15  
8
3
I/O –I/O  
1M x 16  
ARRAY  
0
7
A
48  
47  
A
5
A
A
A
A
A
BHE  
4
7
4
3
A
5
A
8
6
I/O –I/O  
8
15  
A
6
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
A
7
9
2
A
7
A
10  
11  
12  
8
A
9
1
0
A
8
A
9
NC  
CE 13  
OE  
V
V
COLUMN  
DECODER  
CC  
SS  
14  
15  
16  
17  
18  
19  
20  
21  
22  
DNU/V  
BLE  
WE  
CC  
SS  
DNU/V  
A
19  
A
10  
A
18  
A
11  
BHE  
WE  
A
A
A
A
13  
17  
16  
15  
12  
A
A
14  
CE  
I/O  
V
I/O  
V
OE  
BLE  
0
7
23  
24  
25  
26  
27  
CC  
SS  
I/O  
I/O  
6
5
1
2
I/O  
I/O  
V
V
CC  
SS  
I/O  
28 I/O  
3
4
Notes:  
1. DNU/V Pin (#16) has to be left floating or connected to V and DNU/V Pin (#40) has to be left floating or connected to V to ensure proper application.  
CC  
CC  
SS  
SS  
2. NC – No Connect Pins are not connected to the die  
Cypress Semiconductor Corporation  
Document #: 38-05693 Rev. *B  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised August 3, 2006  
1234567...9

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