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CY7C1061AV33-8ZI

更新时间： 2024-11-22 22:03:35
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
11页 273K
描述
1M x 16 Static RAM

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CY7C1061AV33-8ZI 数据手册

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CY7C1061AV33  
1M x 16 Static RAM  
specified on the address pins (A0 through A19). If Byte High  
Enable (BHE) is LOW, then data from I/O pins (I/O8 through  
I/O15) is written into the location specified on the address pins  
(A0 through A19).  
Features  
• High speed  
— tAA = 8, 10, 12 ns  
Reading from the device is accomplished by enabling the chip  
by taking CE1 LOW and CE2 HIGH while forcing the Output  
Enable (OE) LOW and the Write Enable (WE) HIGH. If Byte  
Low Enable (BLE) is LOW, then data from the memory location  
specified by the address pins will appear on I/O0 to I/O7. If Byte  
High Enable (BHE) is LOW, then data from memory will appear  
on I/O8 to I/O15. See the truth table at the back of this data  
sheet for a complete description of Read and Write modes.  
• Low active power  
— 1080 mW (max.)  
• Operating voltages of 3.3 ± 0.3V  
• 2.0V data retention  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE1 and CE2 features  
The input/output pins (I/O0 through I/O15) are placed in a  
high-impedance state when the device is deselected (CE1  
HIGH/CE2 LOW), the outputs are disabled (OE HIGH), the  
BHE and BLE are disabled (BHE, BLE HIGH), or during a  
Write operation (CE1 LOW, CE2 HIGH, and WE LOW).  
Functional Description  
The CY7C1061AV33 is a high-performance CMOS Static  
RAM organized as 1,048,576 words by 16 bits.  
Writing to the device is accomplished by enabling the chip  
(CE1 LOW and CE2 HIGH) while forcing the Write Enable  
(WE) input LOW. If Byte Low Enable (BLE) is LOW, then data  
from I/O pins (I/O0 through I/O7), is written into the location  
The CY7C1061AV33 is available in a 54-pin TSOP II package  
with center power and ground (revolutionary) pinout, and a  
48-ball fine-pitch ball grid array (FBGA) package.  
Pin Configuration  
Logic Block Diagram  
TSOP II (Top View)  
1
54 I/O  
11  
INPUT BUFFER  
I/O  
V
12  
CC  
53  
52  
51  
50  
V
I/O  
I/O  
2
3
4
5
6
SS  
I/O  
13  
14  
10  
A
0
A
1
I/O  
V
9
V
CC  
SS  
A
2
I/O  
49 I/O  
15  
8
A
3
4
I/O –I/O  
1M x 16  
ARRAY  
0
7
A
A
3
A
A
1
A
48  
47  
A
5
A
6
7
A
4
8
A
5
6
4096 x 4096  
I/O –I/O  
8
15  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
A
7
A
9
2
A
10  
11  
12  
13  
A
8
7
A
A
9
8
A
0
NC  
9
BHE  
CE  
OE  
1
V
V
CC  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
SS  
WE  
DNU (Do Not Use)  
BLE  
COLUMN  
DECODER  
CE  
2
A
19  
A
10  
A
18  
A
11  
A
12  
A
13  
A
A
A
17  
16  
15  
BHE  
WE  
A
14  
I/O  
V
I/O  
V
0
7
CE  
2
1
CC  
SS  
CE  
24  
25  
26  
27  
I/O  
I/O  
OE  
BLE  
6
5
1
2
I/O  
I/O  
V
V
SS  
CC  
I/O  
I/O  
3
4
Selection Guide  
-8  
8
-10  
10  
-12  
12  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
Commercial  
Industrial  
300  
300  
50  
275  
275  
50  
260  
260  
50  
mA  
Maximum CMOS Standby Current  
Commercial/Industrial  
mA  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose  
•
CA 95134  
•
408-943-2600  
Document #: 38-05256 Rev. *D  
Revised February 21, 2003  
1234567...11

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