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CY62138F_11 PDF预览

CY62138F_11

更新时间: 2024-11-24 09:42:47
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
15页 582K
描述
2-Mbit (256 K x 8) Static RAM Automatic power down when deselected

CY62138F_11 数据手册

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CY62138F MoBL®  
2-Mbit (256 K × 8) Static RAM  
2-Mbit (256  
K × 8) Static RAM  
Features  
Functional Description  
High speed: 45 ns  
The CY62138F is a high performance CMOS static RAM  
organized as 256K words by 8 bits. This device features  
advanced circuit design to provide ultra low active current. This  
is ideal for providing More Battery Life™ (MoBL®) in portable  
applications such as cellular telephones. The device also has an  
automatic power down feature that significantly reduces power  
consumption when addresses are not toggling. Placing the  
device into standby mode reduces power consumption by more  
than 99% when deselected (CE1 HIGH or CE2 LOW).  
Wide voltage range: 4.5 V to 5.5 V  
Pin compatible with CY62138V  
Ultra low standby power  
Typical standby current: 1 A  
Maximum standby current: 5 A  
Ultra low active power  
Typical active current: 1.6 mA @ f = 1 MHz  
To write to the device, take Chip Enable (CE1 LOW and CE2  
HIGH) and Write Enable (WE) inputs LOW. Data on the eight I/O  
pins (I/O0 through I/O7) is then written into the location specified  
on the address pins (A0 through A17).  
Easy memory expansion with CE1, CE2, and OE features  
Automatic power down when deselected  
To read from the device, take Chip Enable (CE1 LOW and CE2  
HIGH) and output enable (OE) LOW while forcing Write Enable  
(WE) HIGH. Under these conditions, the contents of the memory  
location specified by the address pins appear on the I/O pins.  
Complementary metal oxide semiconductor (CMOS) for  
optimum speed and power  
Available in Pb-free 32-pin SOIC and 32-pin thin small outline  
package (TSOP) II packages  
The eight input and output pins (I/O0 through I/O7) are placed in  
a high impedance state when the device is deselected (CE1  
HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or  
during a write operation (CE1 LOW and CE2 HIGH and WE  
LOW).  
Logic Block Diagram  
Cypress Semiconductor Corporation  
Document #: 001-13194 Rev. *E  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised June 20, 2011  
[+] Feedback  

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