CY62138F MoBL®
2-Mbit (256 K × 8) Static RAM
2-Mbit (256
K × 8) Static RAM
Features
Functional Description
■ High speed: 45 ns
The CY62138F is a high performance CMOS static RAM
organized as 256K words by 8 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL®) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption when addresses are not toggling. Placing the
device into standby mode reduces power consumption by more
than 99% when deselected (CE1 HIGH or CE2 LOW).
■ Wide voltage range: 4.5 V to 5.5 V
■ Pin compatible with CY62138V
■ Ultra low standby power
❐ Typical standby current: 1 A
❐ Maximum standby current: 5 A
■ Ultra low active power
❐ Typical active current: 1.6 mA @ f = 1 MHz
To write to the device, take Chip Enable (CE1 LOW and CE2
HIGH) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O0 through I/O7) is then written into the location specified
on the address pins (A0 through A17).
■ Easy memory expansion with CE1, CE2, and OE features
■ Automatic power down when deselected
To read from the device, take Chip Enable (CE1 LOW and CE2
HIGH) and output enable (OE) LOW while forcing Write Enable
(WE) HIGH. Under these conditions, the contents of the memory
location specified by the address pins appear on the I/O pins.
■ Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
■ Available in Pb-free 32-pin SOIC and 32-pin thin small outline
package (TSOP) II packages
The eight input and output pins (I/O0 through I/O7) are placed in
a high impedance state when the device is deselected (CE1
HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE1 LOW and CE2 HIGH and WE
LOW).
Logic Block Diagram
Cypress Semiconductor Corporation
Document #: 001-13194 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 20, 2011
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