Datasheet > CSD17301Q5A_101

CSD17301Q5A_101

更新时间： 2024-09-25 09:33:51

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30V, N-Channel NexFET? Power MOSFETs

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CSD17301Q5A_101 数据手册

CSD17301Q5A

www.ti.com

SLPS215B –JANUARY 2010–REVISED JULY 2010

30V, N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD17301Q5A

FEATURES

PRODUCT SUMMARY

•

Optimized for 5V Gate Drive

V_DS

Q_g

Drain to Source Voltage

Gate Charge Total (4.5V)

Gate Charge Gate to Drain

Ultralow Q_gand Q_gd

mΩ

Low Thermal Resistance

Avalanche Rated

Q_gd

4.3

V_GS= 3V

2.9

2.3

R_DS(on)Drain to Source On Resistance

V_GS= 4.5V

V_GS= 8V

Pb Free Terminal Plating

RoHS Compliant

V_GS(th)

Threshold Voltage

1.1

Halogen Free

SON 5-mm × 6-mm Plastic Package

ORDERING INFORMATION

Device

CSD17301Q5A

Package

Media

Qty

Ship

APPLICATIONS

SON 5-mm × 6-mm

Plastic Package

13-inch

reel

Tape and

Reel

2500

•

Notebook Point of Load

•

Point-of-Load Synchronous Buck in

Networking, Telecom and Computing Systems

ABSOLUTE MAXIMUM RATINGS

•

Optimized for Synchronous FET Applications

T_A= 25°C unless otherwise stated

VALUE

UNIT

V_DS

V_GS

Drain to Source Voltage

DESCRIPTION

Gate to Source Voltage

+10 / –8

100

Continuous Drain Current, T_C= 25°C

Continuous Drain Current⁽¹⁾

Pulsed Drain Current, T_A= 25°C⁽²⁾

Power Dissipation⁽¹⁾

The NexFET™ power MOSFET has been designed

to minimize losses in power conversion applications,

and optimized for 5V gate drive applications.

I_D

I_DM

P_D

T_J,

118

3.2

Top View

Operating Junction and Storage

–55 to 150

414

°C

T_STGTemperature Range

Avalanche Energy, single pulse

I_D= 91A, L = 0.1mH, R_G= 25Ω

E_AS

(1) Typical R_qJA

39°C/W on 1-inch²(6.45-cm²), 2-oz.

(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4

PCB.

(2) Pulse duration ≤300ms, duty cycle ≤2%

P0093-01

R_DS(on)vs V_GS

GATE CHARGE

I_D= 25A

V_DS= 15V

T_C= 125°C

T_C= 25°C

V_GS- Gate-to-Source Voltage - V

Q_g- Gate Charge - nC

G006

G003

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...11

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与CSD17301Q5A_101相关器件

型号	品牌	获取价格	描述	数据表
CSD17302Q5A	TI	获取价格	30V, N-Channel NexFET™ Power MOSFETs
CSD17302Q5A_10	TI	获取价格	The NexFET power MOSFET has been designed to minimize losses in power conversion applicati
CSD17303Q5	TI	获取价格	30V N-Channel NexFET™ Power MOSFET
CSD17304Q3	TI	获取价格	30V N-Channel NexFET™ Power MOSFETs
CSD17304Q3_10	TI	获取价格	The NexFET power MOSFET has been designed to minimize losses in power conversion applicati
CSD17305Q5A	TI	获取价格	30V, N-Channel NexFET™ Power MOSFETs
CSD17305Q5A_10	TI	获取价格	The NexFET power MOSFET has been designed to minimize losses in power conversion applicati
CSD17306Q5A	TI	获取价格	30V, N-Channel NexFET™ Power MOSFETs
CSD17307Q5A	TI	获取价格	30V, N-Channel NexFET™ Power MOSFETs
CSD17308Q3	TI	获取价格	30V N-Channel NexFETâ¢ Power MOSFETs

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