Datasheet > CSB1116Y

CSB1116Y

更新时间： 2024-11-09 23:43:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	62K
描述
TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 1A I(C) \| TO-92

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数据手册

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CSB1116Y 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP EPITAXIAL PLANAR SILICON TRANSISTOR

CSB1116

CSB1116A

TO-92

BCE

Audio Frequency Power Amplifier And Medium Speed Switching

Complementary CSD1616/1616A

ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C)

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

CSB1116 CSB1116A

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current DC

Collector Current Pulse

Collector Dissipation

IC*

0.75

55 to +150

Operating And Storage Junction

Temperature Range

Tj, Tstg

deg C

*PW=10ms, duty Cycle=50%

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

ICBO

IEBO

hFE(1) *

VCB=60V, IE=0

VEB=6V, IC=0

IC=100mA, VCE=2V

100

600

400

0.70

0.35

1.2

CSB1116

CSB1116A

135

0.60

hFE(2) *

VBE(on)* VCE=2V,IC=50mA

Collector Emitter Saturation Voltage VCE(Sat) * IC=1A, IB=50mA

IC=1A, VCE=2V

Base Emitter On Voltage

Base Emitter Saturation Voltage

VBE(Sat) * IC=1A, IB=50mA

Dynamic Characteristics

Transition Frequency

Collector Output Capacitance

Cob

VCE=2V,IC=100mA,

VCB=10V, IE=0

f=1MHz

MHz

SWITCHING TIMES

Turn on time

Storage time

Fall time

ton

tstg

VCC=10V,IC=100mA

IB1=IB2=10mA,

VBE(off)2=3V

0.07

0.7

0.07

hFE(1) CLASSIFICATION CSB1116

Y: 135-270

G: 200-400

L: 300-600

*Pulse Test : PW=350us, Duty Cycle=2% Pulsed

Continental Device India Limited

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Data Sheet

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